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DCP69A-13 PDF预览

DCP69A-13

更新时间: 2024-10-03 19:49:39
品牌 Logo 应用领域
美台 - DIODES 开关光电二极管晶体管
页数 文件大小 规格书
4页 161K
描述
Small Signal Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, GREEN, PLASTIC PACKAGE-4

DCP69A-13 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Not Recommended包装说明:GREEN, PLASTIC PACKAGE-4
针数:4Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:19 weeks
风险等级:5.71外壳连接:COLLECTOR
最大集电极电流 (IC):1 A集电极-发射极最大电压:20 V
配置:SINGLE最小直流电流增益 (hFE):40
JESD-30 代码:R-PDSO-G4JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:4最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):250 MHz
Base Number Matches:1

DCP69A-13 数据手册

 浏览型号DCP69A-13的Datasheet PDF文件第2页浏览型号DCP69A-13的Datasheet PDF文件第3页浏览型号DCP69A-13的Datasheet PDF文件第4页 
DCP69A/-16  
NOT RECOMMENDED FOR NEW  
DESIGNS, USE DCP69/-16  
PNP SURFACE MOUNT TRANSISTOR  
Features  
Epitaxial Planar Die Construction  
3
2
1
Complementary NPN Type Available (DCP68)  
Ideally Suited for Automated Assembly Processes  
Ideal for Medium Power Switching or Amplification Applications  
Lead Free By Design/RoHS Compliant (Note 1)  
"Green" Device (Note 2)  
4
COLLECTOR  
Mechanical Data  
3 E  
2 C  
2,4  
Case: SOT-223  
Case Material: Molded Plastic, "Green” Molding Compound.  
UL Flammability Classification Rating 94V-0  
C 4  
1
BASE  
B
1
Moisture Sensitivity: Level 1 per J-STD-020C  
Terminals: Finish - Matte Tin annealed over Copper leadframe  
(Lead Free Plating). Solderable per MIL-STD -202, Method 208  
3
EMITTER  
TOP VIEW  
Marking & Type Code Information: See Page 3  
Ordering Information: See Page 3  
Weight: 0.115 grams (approximate)  
Schematic and Pin Configuration  
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Collector-Base Voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Value  
-25  
-20  
Units  
V
V
V
A
Collector-Emitter Voltage  
Emitter-Base Voltage  
-5.0  
-1.0  
Collector Current  
Thermal Characteristics  
Characteristic  
Symbol  
Value  
1
Unit  
W
Total Power Dissipation @ TA = 25ºC (Note 3)  
Pd  
125  
Thermal Resistance, Junction to Ambient Air @ TA = 25°C (Note 3)  
°C/W  
°C  
Rθ  
JA  
Operating and Storage Temperature Range  
-55 to +150  
Tj, TSTG  
Electrical Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
OFF CHARACTERISTICS (Note 4)  
Symbol  
Min  
Typ  
Max  
Unit Test Condition  
Collector-Emitter Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Collector-Base Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector-Base Cutoff Current  
-25  
-20  
-25  
-5.0  
V
V
V(BR)CES  
V(BR)CEO  
V(BR)CBO  
V(BR)EBO  
ICBO  
IC = -100μA, IE = 0  
IC = -1.0mA, IB = 0  
IC = -10μA, IE = 0  
IE = -10μA, IC = 0  
VCB = -25V, IE = 0  
V
V
-100  
-10  
nA  
μA  
Emitter-Base Cutoff Current  
IEBO  
VEB = -5.0V, IC = 0  
ON CHARACTERISTICS (Note 4)  
IC = -5.0mA, VCE = -10V  
IC = -500mA, VCE = -1.0V  
50  
85  
40  
375  
DCP69A, DCP69A-16  
DCP69A-16  
DC Current Gain  
hFE  
I
C = -1.0A, VCE = -1.0V  
100  
250  
-0.5  
IC = -500mA, VCE = -1.0V  
IC = -1.0A, IB = -100mA  
IC = -5mA, VCE = 10V  
Collector-Emitter Saturation Voltage  
Base-Emitter Turn-On Voltage  
V
V
VCE(SAT)  
VBE (ON)  
-0.6  
-1.0  
IC = -1.0A, VCE = -1.0V  
SMALL SIGNAL CHARACTERISTICS  
IC = -100mA, VCE = -5.0V  
f = 100MHz  
Current Gain-Bandwidth Product  
250  
MHz  
fT  
Notes:  
1. No purposefully added lead.  
2. Diodes Inc.'s "Green" Policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can  
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle < 2%.  
DS31102 Rev. 6 - 3  
1 of 4  
DCP69A/-16  
© Diodes Incorporated  
www.diodes.com  

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