SPICE MODEL: DCP55 DCP55-16
DCP55/-16
NPN SURFACE MOUNT TRANSISTOR
Features
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•
•
•
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Epitaxial Planar Die Construction
3
2
1
Complementary PNP Type Available (DCP52)
Ideally Suited for Automated Assembly Processes
Ideal for Medium Power Switching or Amplification Applications
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
4
SOT-223
Mechanical Data
COLLECTOR
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•
Case: SOT-223
3 E
2 C
2,4
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish − Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Marking & Type Code Information: See Page 3
Ordering Information: See Page 3
C 4
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•
1
BASE
B
1
3
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EMITTER
TOP VIEW
Schematic and Pin Configuration
Weight: 0.115 grams (approximate)
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Symbol
VCBO
VCEO
VEBO
ICM
Value
60
60
5
1.5
1
Unit
V
V
V
A
A
IC
Thermal Characteristics
Characteristic
Symbol
Value
Unit
1 (Note 3)
2 (Note 4)
W
Power Dissipation @ TA = 25°C
Pd
Operating and Storage Temperature Range
-55 to +150
125
Tj,TSTG
°C
Thermal Resistance Junction to Ambient Air @ TA = 25°C (Note 3)
°C/W
Rθ
JA
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Conditions
C = 100μA, IE = 0A
C = 10mA, IB = 0A
E = 10μA, IC = 0A
60
60
5
V
V
V
V(BR)CBO
V(BR)CEO
V(BR)EBO
⎯
⎯
⎯
⎯
⎯
⎯
I
I
I
nA
μA
μA
VCB = 30V, IE = 0A
CB = 30V, IE = 0A, TA = 150°C
VEB = 5V, IC = 0A
⎯
⎯
⎯
⎯
⎯
⎯
100
20
Collector Cut-Off Current
ICBO
IEBO
V
Emitter Cut-Off Current
10
ON CHARACTERISTICS (Note 5)
Collector-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
0.5
1.0
250
⎯
V
V
VCE(SAT)
VBE(ON)
⎯
⎯
40
25
⎯
⎯
IC = 500mA, IB = 50mA
IC = 500mA, VCE = 2V
I
C = 150mA, VCE = 2V
⎯
⎯
hFE
DC Current Gain
⎯
IC = 500mA, VCE = 2V
IC = 150mA, VCE = 2V
DCP55-16
100
250
SMALL SIGNAL CHARACTERISTICS
IC = 50mA, VCE = 5V,
f = 100MHz
Transition Frequency
200
MHz
fT
⎯
⎯
Note:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB pad layout as shown on page 4 or on Diodes, Inc. suggested pad layout document AP02001, which can be found on
our website at http://www.diodes.com/datasheets/ap02001.pdf.
4. Device mounted on Polyimide PCB with a copper area of 1.8cm2.
5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%
DS30707 Rev. 6 - 2
1 of 4
DCP55/-16
© Diodes Incorporated
www.diodes.com