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DCP55-13 PDF预览

DCP55-13

更新时间： 2024-10-03 10:01:11
品牌 Logo 应用领域
美台 - DIODES 晶体小信号双极晶体管开关光电二极管
页数 文件大小 规格书
4页 327K
描述
NPN SURFACE MOUNT TRANSISTOR

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中文翻译

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DCP55-13 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Not Recommended包装说明：SMALL OUTLINE, R-PDSO-G4
针数：4Reach Compliance Code：compliant
ECCN代码：EAR99Factory Lead Time：19 weeks
风险等级：5.74外壳连接：COLLECTOR
最大集电极电流 (IC)：1 A集电极-发射极最大电压：60 V
配置：SINGLE最小直流电流增益 (hFE)：25
JESD-30 代码：R-PDSO-G4JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：4最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性/信道类型：NPN最大功率耗散 (Abs)：2 W
认证状态：Not Qualified子类别：Other Transistors
表面贴装：YES端子面层：Matte Tin (Sn)
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：40晶体管应用：SWITCHING
晶体管元件材料：SILICON标称过渡频率 (fT)：200 MHz
Base Number Matches：1

DCP55-13 数据手册

 浏览型号DCP55-13的Datasheet PDF文件第2页浏览型号DCP55-13的Datasheet PDF文件第3页浏览型号DCP55-13的Datasheet PDF文件第4页 
SPICE MODEL: DCP55 DCP55-16  
DCP55/-16  
NPN SURFACE MOUNT TRANSISTOR  
Features  
•
•
•
•
•
•
Epitaxial Planar Die Construction  
3
2
1
Complementary PNP Type Available (DCP52)  
Ideally Suited for Automated Assembly Processes  
Ideal for Medium Power Switching or Amplification Applications  
Lead Free By Design/RoHS Compliant (Note 1)  
"Green" Device (Note 2)  
4
SOT-223  
Mechanical Data  
COLLECTOR  
•
•
Case: SOT-223  
3 E  
2 C  
2,4  
Case Material: Molded Plastic, “Green” Molding Compound. UL  
Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020C  
Terminals: Finish − Matte Tin annealed over Copper leadframe  
(Lead Free Plating). Solderable per MIL-STD-202, Method 208  
Marking & Type Code Information: See Page 3  
Ordering Information: See Page 3  
C 4  
•
•
1
BASE  
B
1
3
•
•
•
EMITTER  
TOP VIEW  
Schematic and Pin Configuration  
Weight: 0.115 grams (approximate)  
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Peak Pulse Current  
Continuous Collector Current  
Symbol  
VCBO  
VCEO  
VEBO  
ICM  
Value  
60  
60  
5
1.5  
1
Unit  
V
V
V
A
A
IC  
Thermal Characteristics  
Characteristic  
Symbol  
Value  
Unit  
1 (Note 3)  
2 (Note 4)  
W
Power Dissipation @ TA = 25°C  
Pd  
Operating and Storage Temperature Range  
-55 to +150  
125  
Tj,TSTG  
°C  
Thermal Resistance Junction to Ambient Air @ TA = 25°C (Note 3)  
°C/W  
Rθ  
JA  
Electrical Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
OFF CHARACTERISTICS (Note 5)  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Symbol  
Min  
Typ  
Max  
Unit  
Conditions  
C = 100μA, IE = 0A  
C = 10mA, IB = 0A  
E = 10μA, IC = 0A  
60  
60  
5
V
V
V
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
⎯
⎯
⎯
⎯
⎯
⎯
I
I
I
nA  
μA  
μA  
VCB = 30V, IE = 0A  
CB = 30V, IE = 0A, TA = 150°C  
VEB = 5V, IC = 0A  
⎯
⎯
⎯
⎯
⎯
⎯
100  
20  
Collector Cut-Off Current  
ICBO  
IEBO  
V
Emitter Cut-Off Current  
10  
ON CHARACTERISTICS (Note 5)  
Collector-Emitter Saturation Voltage  
Base-Emitter Turn-On Voltage  
0.5  
1.0  
250  
⎯
V
V
VCE(SAT)  
VBE(ON)  
⎯
⎯
40  
25  
⎯
⎯
IC = 500mA, IB = 50mA  
IC = 500mA, VCE = 2V  
I
C = 150mA, VCE = 2V  
⎯
⎯
hFE  
DC Current Gain  
⎯
IC = 500mA, VCE = 2V  
IC = 150mA, VCE = 2V  
DCP55-16  
100  
250  
SMALL SIGNAL CHARACTERISTICS  
IC = 50mA, VCE = 5V,  
f = 100MHz  
Transition Frequency  
200  
MHz  
fT  
⎯
⎯
Note:  
1. No purposefully added lead.  
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
3. Device mounted on FR-4 PCB pad layout as shown on page 4 or on Diodes, Inc. suggested pad layout document AP02001, which can be found on  
our website at http://www.diodes.com/datasheets/ap02001.pdf.  
4. Device mounted on Polyimide PCB with a copper area of 1.8cm2.  
5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%  
DS30707 Rev. 6 - 2  
1 of 4  
DCP55/-16  
© Diodes Incorporated  
www.diodes.com  
1234

中文翻译

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DCP55-13 替代型号

型号 品牌 替代类型 描述 数据表
BCP55TA DIODES

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