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DCP68-25-13 PDF预览

DCP68-25-13

更新时间： 2024-10-03 10:01:11
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管
页数 文件大小 规格书
4页 192K
描述
NPN SURFACE MOUNT TRANSISTOR

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中文翻译

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DCP68-25-13 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active包装说明：SMALL OUTLINE, R-PDSO-G4
针数：4Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：1.71
外壳连接：COLLECTOR最大集电极电流 (IC)：1 A
集电极-发射极最大电压：20 V配置：SINGLE
最小直流电流增益 (hFE)：60JESD-30 代码：R-PDSO-G4
JESD-609代码：e3湿度敏感等级：1
元件数量：1端子数量：4
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260极性/信道类型：NPN
最大功率耗散 (Abs)：1 W认证状态：Not Qualified
子类别：Other Transistors表面贴装：YES
端子面层：Matte Tin (Sn)端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：40
晶体管应用：SWITCHING晶体管元件材料：SILICON
标称过渡频率 (fT)：330 MHzBase Number Matches：1

DCP68-25-13 数据手册

 浏览型号DCP68-25-13的Datasheet PDF文件第2页浏览型号DCP68-25-13的Datasheet PDF文件第3页浏览型号DCP68-25-13的Datasheet PDF文件第4页 
DCP68/-25  
NPN SURFACE MOUNT TRANSISTOR  
Please click here to visit our online spice models database.  
Features  
•
•
•
•
•
•
Epitaxial Planar Die Construction  
3
2
1
Complementary PNP Type Available (DCP69)  
Ideally Suited for Automated Assembly Processes  
Ideal for Medium Power Switching or Amplification Applications  
Lead Free By Design/RoHS Compliant (Note 1)  
"Green" Device (Note 2)  
4
SOT-223  
Mechanical Data  
COLLECTOR  
•
•
Case: SOT-223  
Case Material: Molded Plastic, “Green” Molding Compound.  
UL Flammability Classification Rating 94V-0  
2,4  
3 E  
2
1
C
B
C
4
1
•
•
Moisture Sensitivity: Level 1 per J-STD-020D  
Terminals: Finish - Matte Tin annealed over Copper leadframe  
(Lead Free Plating). Solderable per MIL-STD-202, Method 208  
BASE  
3
EMITTER  
TOP VIEW  
•
•
•
Marking Information: See Page 3  
Ordering Information: See Page 3  
Weight: 0.115 grams  
Schematic and Pin Configuration  
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Collector-Base Voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Value  
25  
Units  
V
V
V
A
Collector-Emitter Voltage  
Emitter-Base Voltage  
20  
5.0  
Collector Current  
1.0  
Thermal Characteristics  
Characteristic  
Symbol  
Value  
1
Unit  
W
Power Dissipation @ TA = 25ºC (Note 3)  
PD  
125  
Thermal Resistance, Junction to Ambient Air @ TA = 25°C (Note 3)  
Operating and Storage Temperature Range  
°C/W  
°C  
Rθ  
JA  
-55 to 150  
TJ, TSTG  
Electrical Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
OFF CHARACTERISTICS (Note 4)  
Symbol  
Min  
Typ  
Max  
Unit  
Test Condition  
Collector-Emitter Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Collector-Base Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector-Base Cutoff Current  
25  
20  
25  
5.0  
—
—
—
—
—
—
—
—
—
—
—
100  
10  
V
V
V
V
nA  
μA  
V(BR)CES  
V(BR)CEO  
V(BR)CBO  
V(BR)EBO  
ICBO  
I
C = 100μA, IE = 0  
IC = 1.0mA, IB = 0  
I
I
C = 10μA, IE = 0  
E = 10μA, IC = 0  
CB = 25V, IE = 0  
V
Emitter-Base Cutoff Current  
—
IEBO  
VEB = 5.0V, IC = 0  
ON CHARACTERISTICS (Note 4)  
V
CE = 10V, IC = 5.0mA  
50  
60  
—
—
—
—
DCP68, DCP68-25  
VCE = 1.0V, IC = 1.0A  
V
V
DC Current Gain  
—
hFE  
DCP68  
DCP68-25  
85  
160  
—
—
—
—
—
375  
375  
0.5  
1.0  
CE = 1.0V, IC = 500mA  
CE = 1.0V, IC = 500mA  
Collector-Emitter Saturation Voltage  
Base-Emitter Turn-On Voltage  
SMALL SIGNAL CHARACTERISTICS  
V
V
VCE(SAT)  
VBE (ON)  
IC = 1.0A, IB = 100mA  
CE = 1.0V, IC = 1.0A  
—
V
IC = 100mA, VCE = 5.0V  
f = 100MHz  
Current Gain-Bandwidth Product  
—
330  
—
MHz  
fT  
Notes:  
1. No purposefully added lead.  
2. Diodes Inc.'s "Green" Policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can  
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.  
DS30797 Rev. 6 - 2  
1 of 4  
www.diodes.com  
DCP68/-25  
© Diodes Incorporated  
1234

中文翻译

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