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DCP69A

更新时间： 2024-10-03 10:01:11
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管
页数 文件大小 规格书
4页 187K
描述
PNP SURFACE MOUNT TRANSISTOR

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中文翻译

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DCP69A 数据手册

 浏览型号DCP69A的Datasheet PDF文件第2页浏览型号DCP69A的Datasheet PDF文件第3页浏览型号DCP69A的Datasheet PDF文件第4页 
DCP69A/-16  
NOT RECOMMENDED FOR NEW  
DESIGNS, USE DCP69/-16  
PNP SURFACE MOUNT TRANSISTOR  
Features  
•
•
•
•
•
•
Epitaxial Planar Die Construction  
3
2
1
Complementary NPN Type Available (DCP68)  
Ideally Suited for Automated Assembly Processes  
Ideal for Medium Power Switching or Amplification Applications  
Lead Free By Design/RoHS Compliant (Note 1)  
"Green" Device (Note 2)  
4
COLLECTOR  
Mechanical Data  
3 E  
2 C  
2,4  
•
•
Case: SOT-223  
Case Material: Molded Plastic, "Green” Molding Compound.  
UL Flammability Classification Rating 94V-0  
C 4  
1
BASE  
B
1
•
•
Moisture Sensitivity: Level 1 per J-STD-020C  
Terminals: Finish - Matte Tin annealed over Copper leadframe  
(Lead Free Plating). Solderable per MIL-STD -202, Method 208  
3
EMITTER  
TOP VIEW  
•
•
•
Marking & Type Code Information: See Page 3  
Ordering Information: See Page 3  
Weight: 0.115 grams (approximate)  
Schematic and Pin Configuration  
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Collector-Base Voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Value  
-25  
-20  
Units  
V
V
V
A
Collector-Emitter Voltage  
Emitter-Base Voltage  
-5.0  
-1.0  
Collector Current  
Thermal Characteristics  
Characteristic  
Symbol  
Value  
1
Unit  
W
Total Power Dissipation @ TA = 25ºC (Note 3)  
Pd  
125  
Thermal Resistance, Junction to Ambient Air @ TA = 25°C (Note 3)  
°C/W  
°C  
Rθ  
JA  
Operating and Storage Temperature Range  
-55 to +150  
Tj, TSTG  
Electrical Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
OFF CHARACTERISTICS (Note 4)  
Symbol  
Min  
Typ  
Max  
Unit Test Condition  
Collector-Emitter Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Collector-Base Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector-Base Cutoff Current  
-25  
-20  
-25  
-5.0  
—
—
—
—
—
—
—
—
—
V
V
V(BR)CES  
V(BR)CEO  
V(BR)CBO  
V(BR)EBO  
ICBO  
I
C = -100μA, IE = 0  
IC = -1.0mA, IB = 0  
—
V
I
I
C = -10μA, IE = 0  
E = -10μA, IC = 0  
—
V
-100  
-10  
nA  
μA  
V
V
CB = -25V, IE = 0  
EB = -5.0V, IC = 0  
Emitter-Base Cutoff Current  
—
IEBO  
ON CHARACTERISTICS (Note 4)  
IC = -5.0mA, VCE = -10V  
IC = -500mA, VCE = -1.0V  
50  
85  
40  
—
—
—
—
375  
—
DCP69A, DCP69A-16  
DCP69A-16  
DC Current Gain  
—
hFE  
I
C = -1.0A, VCE = -1.0V  
100  
—
—
—
250  
-0.5  
—
I
C = -500mA, VCE = -1.0V  
Collector-Emitter Saturation Voltage  
Base-Emitter Turn-On Voltage  
V
V
VCE(SAT)  
VBE (ON)  
IC = -1.0A, IB = -100mA  
IC = -5mA, VCE = 10V  
IC = -1.0A, VCE = -1.0V  
—
-0.6  
—
—
-1.0  
SMALL SIGNAL CHARACTERISTICS  
IC = -100mA, VCE = -5.0V  
f = 100MHz  
Current Gain-Bandwidth Product  
—
250  
—
MHz  
fT  
Notes:  
1. No purposefully added lead.  
2. Diodes Inc.'s "Green" Policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can  
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle < 2%.  
DS31102 Rev. 6 - 3  
1 of 4  
DCP69A/-16  
© Diodes Incorporated  
www.diodes.com  
1234

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