Datasheet > DCP53

DCP53

更新时间： 2024-10-03 10:01:11

品牌	Logo	应用领域
美台 - DIODES		晶体晶体管
页数	文件大小	规格书
4页	189K
描述
PNP SURFACE MOUNT TRANSISTOR

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中文翻译

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DCP53 数据手册

DCP53/-16

PNP SURFACE MOUNT TRANSISTOR

Features

•

Epitaxial Planar Die Construction

Complementary NPN Type Available (DCP56)

Ideally Suited for Automated Assembly Processes

Ideal for Medium Power Switching or Amplification Applications

Lead Free By Design/RoHS Compliant (Note 1)

"Green" Device (Note 2)

SOT-223

Mechanical Data

COLLECTOR

2,4

3 E

2 C

•

Case: SOT-223

Case Material: Molded Plastic, "Green” Molding Compound.

UL Flammability Classification Rating 94V-0

C 4

BASE

•

Moisture Sensitivity: Level 1 per J-STD-020C

Terminals: Finish - Matte Tin annealed over Copper leadframe

(Lead Free Plating). Solderable per MIL-STD-202, Method 208

EMITTER

TOP VIEW

•

Marking & Type Code Information: See Page 3

Ordering Information: See Page 3

Weight: 0.115 grams (approximate)

Schematic and Pin Configuration

Maximum Ratings @T_A= 25°C unless otherwise specified

Characteristic

Collector-Base Voltage

Symbol

V_CBO

V_CEO

V_EBO

I_CM

Value

Units

-100

-80

-5

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

-1.5

-1

Continuous Collector Current

I_C

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Power Dissipation at T_A= 25ºC (Note 3)

P_d

Operating and Storage Temperature Range

-55 to +150

125

T_j, T_STG

°C

Thermal Resistance, Junction to Ambient Air @ T_A= 25ºC (Note 3)

°C/W

R_θ

Electrical Characteristics @T_A= 25°C unless otherwise specified

Characteristic

OFF CHARACTERISTICS (Note 4)

Symbol

Min

Typ

Max

Unit

Test Condition

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

-100

-80

-5

—

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_C= -100μA, I_E= 0

I_C= -10mA, I_B= 0

I_E= -10μA, I_C= 0

_CB= -30V, I_E= 0

_CB= -30V, I_E= 0,

μA

-100

-20

Collector Cutoff Current

—

I_CBO

I_EBO

T_A= 150ºC

Emitter Cutoff Current

-10

μA

V_EB= -5V, I_C= 0

ON CHARACTERISTICS (Note 4)

Collector-Emitter Saturation Voltage

Base-Emitter Turn-On Voltage

—

-0.5

-1.0

V_CE(SAT)

V_{BE (ON)}

I_C= -500mA, I_B= -50mA

I_C= -500mA, V_CE= -2V

I_C= -150mA, V_CE= -2V

250

—

h_FE

_C= -500mA, V_CE= -2V

DC Current Gain

—

DCP53-16

100

250

I_C= -150mA, V_CE= -2V

SMALL SIGNAL CHARACTERISTICS

_C= -50mA, V_CE= -5V,

Current Gain-Bandwidth Product

—

200

—

MHz

f_T

f = 100MHz

Notes:

1. No purposefully added lead.

2. Diodes Inc.'s "Green" Policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can

be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤ 2%.

DS30794 Rev. 4 - 2

1 of 4

DCP53/-16

www.diodes.com

12 3 4

中文翻译

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