DCP54/-16
NPN SURFACE MOUNT TRANSISTOR
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Features
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Epitaxial Planar Die Construction
3
2
1
Complementary PNP Type Available (DCP51)
Ideally Suited for Automated Assembly Processes
Ideal for Medium Power Switching or Amplification Applications
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
4
SOT-223
Mechanical Data
COLLECTOR
2,4
3 E
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Case: SOT-223
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
2 C
C
4
1
BASE
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Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish — Matte Tin annealed over Copper Leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
B
1
3
EMITTER
TOP VIEW
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Marking & Type Code Information: See Page 3
Ordering Information: See Page 3
Weight: 0.115 grams (approximate)
Schematic and Pin Configuration
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Emitter Voltage
Symbol
VCEO
VCBO
VEBO
IC
Value
45
45
5
Unit
V
Collector-Base Voltage
V
Emitter-Base Voltage
V
Continuous Collector Current
1
A
Thermal Characteristics
Characteristic
Symbol
Value
Unit
1
W
Power Dissipation (Note 3) @TA = 25°C
Pd
Operating and Storage Temperature Range
-55 to +150
125
°C
Tj, TSTG
Thermal Resistance Junction to Ambient Air @ TA = 25°C (Note 3)
°C/W
Rθ
JA
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Off Characteristics (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
IC = 100μA
45
45
5
V
V
V
V(BR)CBO
V(BR)CEO
V(BR)EBO
⎯
⎯
⎯
⎯
⎯
⎯
IC = 10mA
IE = 10μA
nA
μA
μA
100
10
V
V
CB = 30V, IE = 0
CB = 30V, IE = 0, TA = 150°C
Collector-Base Cutoff Current
ICBO
IEBO
⎯
⎯
⎯
⎯
Emitter-Base Cutoff Current
10
VEB = 5V, IC = 0A
On Characteristics (Note 4)
IC = 5mA, VCE = 2V
IC = 150mA, VCE = 2V
IC = 500mA, VCE = 2V
IC = 150mA, VCE = 2V
IC = 500mA, IB = 50mA
IC = 500mA, VCE = 2V
63
63
40
⎯
250
⎯
250
500
1
hFE
⎯
DC Current Gain
⎯
100
⎯
⎯
⎯
⎯
⎯
DCP54-16
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
mV
V
VCE(SAT)
VBE(ON)
Small Signal Characteristics
Transition Frequency
200
MHz
fT
⎯
⎯
IC = 50mA, VCE = 5V, f = 100MHz
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can be found on our
website at http://www.diodes.com/datasheets/ap02001.pdf.
4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤ 2%
DS30816 Rev. 5 - 2
1 of 4
DCP54/-16
© Diodes Incorporated
www.diodes.com