Datasheet > DAN217S3

DAN217S3

更新时间： 2024-09-26 03:28:43

品牌	Logo	应用领域
全宇昕 - CYSTEKEC		二极管开关
页数	文件大小	规格书
4页	119K
描述
HIGH-SPEED SWITCHING DIODE

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数据手册

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DAN217S3 数据手册

Spec. No. : C303S3C

Issued Date : 2003.10.07

CYStech Electronics Corp.

Revised Date :

Page No. : 1/4

. .

DAN217S3

HIGH-SPEED SWITCHING DIODE

Description

The DAN217S3 consists of two diodes in a plastic surface mount package. The diodes are

connected in series and the unit is designed for high-speed switching application in hybrid thick

and thin-film circuits.

Features

• Small SMD Package (SOT-323)

• Ultra-high Speed

• Low Forward Voltage

• Fast Reverse Recovery Time

Equivalent Circuit

Outline

K1, A2

1. Anode 1

2. Cathode 2

3. Cathode 1 / Anode 2

Sot-323

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature............................................................................................ -65 ~ +150 °C

Junction Temperature.................................................................................................... +150 °C

• Maximum Power Dissipation

Total Power Dissipation (Ta=25°C)................................................................................ 200 mW

• Maximum Voltages and Currents (Ta=25°C)

Reverse Voltage .................................................................................................................. 70 V

Repetitive Reverse Voltage ................................................................................................. 70 V

Forward Current ............................................................................................................. 150 mA

Repetitive Forward Current ............................................................................................ 500 mA

Forward Surge Current (1ms)....................................................................................... 1000 mA

DAN217S3

CYStek Product Specification

12 3 4

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