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DAN217U-TP PDF预览

DAN217U-TP

更新时间: 2024-02-24 04:45:46
品牌 Logo 应用领域
美微科 - MCC 光电二极管
页数 文件大小 规格书
3页 234K
描述
Rectifier Diode, 2 Element, 0.1A, 80V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3

DAN217U-TP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:ROHS COMPLIANT, PLASTIC PACKAGE-3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.62配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.2 VJESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:1000 A元件数量:2
端子数量:3最高工作温度:150 °C
最大输出电流:0.1 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260最大功率耗散:0.2 W
认证状态:Not Qualified最大重复峰值反向电压:80 V
子类别:Rectifier Diodes表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:10
Base Number Matches:1

DAN217U-TP 数据手册

 浏览型号DAN217U-TP的Datasheet PDF文件第2页浏览型号DAN217U-TP的Datasheet PDF文件第3页 
M C C  
Micro Commercial Components  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
DAN217U  
Features  
Lead Free Finish/RoHS Compliant ("P" Suffix designates  
RoHS Compliant. See ordering information)  
200mW 80Volt  
Plastic-Encapsulate  
Diode  
Halogen free available upon request by adding suffix "-HF"  
·
Epoxy meets UL 94 V-0 flammability rating  
·
Moisture Sensitivity Level 1  
Small Outline Surface Mount Package  
Low Current Leakage  
C/A  
Pin Configuration  
Top View  
Low Cost  
A7  
SOT-323  
A
A
C
D
Maximum Ratings  
Operating Temperature: -40°C to +150°C  
Storage Temperature: -55°C to +150°C  
C
B
F
E
Electrical Characteristics @ 25°C Unless Otherwise Specified  
Limits  
80  
Unit  
V
Parameter  
Peak reverse voltage  
DC reverse voltage  
Maximum forward current  
Average forward current  
Surge current  
Symbol  
VRM  
VR  
H
G
J
K
80  
V
DIMENSIONS  
INCHES  
IFM  
300  
100  
1000  
200  
150  
mA  
mA  
mA  
mW  
ć
MM  
IO  
DIM  
A
MIN  
.071  
.045  
.083  
MAX  
.087  
.053  
.096  
MIN  
1.80  
1.15  
2.10  
MAX  
2.20  
1.35  
2.45  
NOTE  
IFSM  
PD  
B
C
D
E
Power dissipation  
.026 Nominal  
0.65Nominal  
.047  
.055  
.016  
.004  
.039  
.010  
.016  
1.20  
1.40  
.40  
Junction temperature  
Tj  
F
.012  
.000  
.035  
.004  
.006  
.30  
G
H
J
.000  
.90  
.100  
1.00  
.250  
.40  
.100  
.15  
K
Suggested Solder  
Pad Layout  
0.70  
Parameter  
Symbol Test conditions MIN MAX  
UNIT  
VBR  
Reverse breakdown voltage  
IR=100uA  
80  
V
Reverse voltage leakage  
current  
IR  
VR=70V  
0.2  
uA  
mV  
0.90  
VF  
Forward voltage  
IF=100mA  
1200  
1.90  
0.65  
0.65  
www.mccsemi.com  
1 of 3  
Revision: C  
2013/09/24  

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