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DAN217U-TP-HF PDF预览

DAN217U-TP-HF

更新时间: 2024-01-16 22:23:56
品牌 Logo 应用领域
美微科 - MCC 二极管光电二极管
页数 文件大小 规格书
3页 242K
描述
Rectifier Diode, 2 Element, 0.1A, 80V V(RRM), Silicon, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3

DAN217U-TP-HF 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:EMD3F, SC-89A, 3 PINReach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.62其他特性:HIGH RELIABILITY
配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:R-PDSO-G3
元件数量:2端子数量:3
最高工作温度:150 °C最大输出电流:0.1 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
最大功率耗散:0.15 W最大重复峰值反向电压:80 V
最大反向恢复时间:0.004 µs表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

DAN217U-TP-HF 数据手册

 浏览型号DAN217U-TP-HF的Datasheet PDF文件第2页浏览型号DAN217U-TP-HF的Datasheet PDF文件第3页 
M C C  
Micro Commercial Components  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
DAN217  
Features  
Lead Free Finish/RoHS Compliant ("P" Suffix designates  
RoHS Compliant. See ordering information)  
Low Current Leakage and Low Cost  
Small Outline Surface Mount Package  
200mW 80Volt  
Plastic-Encapsulate  
Diode  
·
·
Epoxy meets UL 94 V-0 flammability rating  
Moisture Sensitivity Level 1  
C/A  
Pin Configuration  
Top View  
BA1  
SOT-23  
A
D
A
C
Maximum Ratings  
Operating Temperature: -40°C to +150°C  
Storage Temperature: -55°C to +150°C  
B
C
F
E
Electrical Characteristics @ 25°C Unless Otherwise Specified  
Limits  
80  
Unit  
V
Parameter  
Peak reverse voltage  
DC reverse voltage  
Maximum forward current  
Average forward current  
Surge current  
Symbol  
VRM  
VR  
H
G
J
80  
V
K
IFM  
300  
100  
1000  
200  
mA  
mA  
mA  
mW  
ć
DIMENSIONS  
IO  
INCHES  
MIN  
MM  
DIM  
A
MAX  
.120  
.098  
.055  
.041  
.081  
.024  
.0039  
.044  
.007  
.020  
MIN  
2.80  
2.10  
1.20  
.89  
MAX  
3.04  
2.64  
1.40  
1.03  
2.05  
.60  
NOTE  
IFSM  
PD  
.110  
.083  
.047  
.035  
.070  
.018  
.0005  
.035  
.003  
.015  
B
Power dissipation  
C
D
E
1
25  
Junction temperature  
Tj  
1.78  
.45  
F
G
H
J
.013  
.89  
.100  
1.12  
.180  
.51  
.085  
.37  
K
Parameter  
Symbol Test conditions MIN MAX  
UNIT  
Suggested Solder  
Pad Layout  
VBR  
Reverse breakdown voltage  
IR=100uA  
VR=70V  
80  
V
Reverse voltage leakage  
current  
IR  
0.1  
uA  
mV  
.031  
.800  
VF  
Forward voltage  
IF=100mA  
1200  
.035  
.900  
.079  
2.000  
inches  
mm  
.037  
.950  
.037  
.950  
www.mccsemi.com  
1 of 3  
Revision: A  
2011/01/01  

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