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D1010UK PDF预览

D1010UK

更新时间: 2024-09-20 14:52:51
品牌 Logo 应用领域
TTELEC /
页数 文件大小 规格书
6页 97K
描述
Gold metallised multi-purpose silicon DMOS RF FET

D1010UK 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:FLANGE MOUNT, R-CDFM-F4Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.3
其他特性:LOW NOISE外壳连接:SOURCE
配置:COMMON SOURCE, 2 ELEMENTS最小漏源击穿电压:70 V
FET 技术:METAL-OXIDE SEMICONDUCTOR最高频带:ULTRA HIGH FREQUENCY BAND
JESD-30 代码:R-CDFM-F4JESD-609代码:e4
元件数量:2端子数量:4
工作模式:ENHANCEMENT MODE最高工作温度:200 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:YES端子面层:GOLD
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON

D1010UK 数据手册

 浏览型号D1010UK的Datasheet PDF文件第2页浏览型号D1010UK的Datasheet PDF文件第3页浏览型号D1010UK的Datasheet PDF文件第4页浏览型号D1010UK的Datasheet PDF文件第5页浏览型号D1010UK的Datasheet PDF文件第6页 
TetraFET  
D1010UK  
ROHS COMPLIANT METAL GATE RF SILICON FET  
MECHANICAL DATA  
GOLD METALLISED  
MULTI-PURPOSE SILICON  
DMOS RF FET  
B
G
(typ)  
C
(2 pls)  
2
3
4
1
P
125W – 28V – 500MHz  
PUSH–PULL  
(2 pls)  
H
D
A
5
E
(4 pls)  
F
I
FEATURES  
• SIMPLIFIED AMPLIFIER DESIGN  
• SUITABLE FOR BROAD BAND APPLICATIONS  
N
M
O
J
K
DR  
PIN 1  
PIN 3  
PIN 5  
SOURCE (COMMON)  
DRAIN 2  
GATE 1  
PIN 2  
PIN 4  
DRAIN 1  
GATE 2  
• LOW C  
rss  
• SIMPLE BIAS CIRCUITS  
• LOW NOISE  
DIM Millimetres Tol.  
Inches  
0.75  
0.424  
45°  
Tol.  
A
B
C
D
E
F
19.05  
10.77  
45°  
9.78  
5.71  
27.94  
1.52R  
10.16  
22.22  
0.13  
0.50  
0.13  
5°  
0.020  
0.005  
5°  
• HIGH GAIN – 10 dB MINIMUM  
0.13  
0.13  
0.13  
0.13  
0.13  
MAX  
0.02  
0.13  
0.13  
0.50  
0.13  
0.08  
0.385  
0.225  
1.100  
0.060R  
0.400  
0.875  
0.005  
0.107  
0.067  
0.200  
1.340  
0.064R  
0.005  
0.005  
0.005  
0.005  
0.005  
MAX  
0.001  
0.005  
0.005  
0.020  
0.005  
0.003  
G
H
I
APPLICATIONS  
J
HF/VHF/UHF COMMUNICATIONS  
from 1 MHz to 500 MHz  
K
M
N
O
P
2.72  
1.70  
5.08  
34.03  
1.61R  
ABSOLUTE MAXIMUM RATINGS (T  
= 25°C unless otherwise stated)  
case  
P
Power Dissipation  
389W  
70V  
D
BV  
BV  
Drain – Source Breakdown Voltage *  
Gate – Source Breakdown Voltage *  
Drain Current *  
DSS  
GSS  
±20V  
I
20A  
D(sat)  
T
T
Storage Temperature  
–65 to 150°C  
200°C  
stg  
Maximum Operating Junction Temperature  
j
* Per Side  
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed  
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.  
Semelab encourages customers to verify that datasheets are current before placing orders.  
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.  
Document Number 2598  
Issue 2  
E-mail: sales@semelab.co.uk  
Website: http://www.semelab.co.uk  

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