TetraFET
D1011UK
METAL GATE RF SILICON FET
MECHANICAL DATA
A
N
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
8
1
2
3
4
D
7
6
5
C
B
P
10W – 28V – 500MHz
SINGLE ENDED
H
K
M
L
FEATURES
J
E
F
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
G
SO8 PACKAGE
PIN 1 – SOURCE
PIN 2 – DRAIN
PIN 3 – DRAIN
PIN 4 – SOURCE
PIN 5 – SOURCE
PIN 6 – GATE
• VERY LOW C
rss
PIN 7 – GATE
• SIMPLE BIAS CIRCUITS
• LOW NOISE
PIN 8 – SOURCE
Dim.
mm
Tol.
0.08
0.08
0.08
0.08
0.08
0.08
0.08
+0.25
-0.00
Min.
Max.
Max.
Min.
Max.
0.08
Max.
0.08
Inches
0.160
0.200
0.050
0.020
0.140
0.160
0.065
Tol.
A
B
C
D
E
F
4.06
5.08
1.27
0.51
3.56
4.06
1.65
0.003
0.003
0.003
0.003
0.003
0.003
0.003
+0.010
-0.000
Min.
Max.
Max.
Min.
Max.
0.003
Max.
0.003
• HIGH GAIN – 13 dB MINIMUM
G
APPLICATIONS
H
0.76
0.030
0.51
1.02
45°
0°
0.020
0.040
45°
0°
7°
0.008
0.086
0.180
• HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 1GHz
J
K
L
7°
M
N
P
0.20
2.18
4.57
ABSOLUTE MAXIMUM RATINGS (T
= 25°C unless otherwise stated)
30W
case
P
Power Dissipation
D
BV
BV
Drain – Source Breakdown Voltage
Gate – Source Breakdown Voltage
Drain Current
70V
20V
DSS
GSS
I
5A
D(sat)
T
T
Storage Temperature
–65 to 150°C
200°C
stg
Maximum Operating Junction Temperature
j
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Document Number 6220
Issue 2
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk