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CYK001M16SCCAU

更新时间: 2024-11-23 23:45:51
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10页 170K
描述
Memory

CYK001M16SCCAU 数据手册

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CYK001M16SCCAU  
ADVANCE  
INFORMATION  
MoBL  
16-Mb (1M x 16) Pseudo Static RAM  
active current. This is ideal for providing More Battery Life  
(MoBL) in portable applications such as cellular telephones.  
The device can be put into standby mode reducing power  
consumption by more than 99% when deselected using CE  
LOW, CE2 HIGH or both BHE and BLE are HIGH. The  
input/output pins (I/O0 through I/O15) are placed in a  
high-impedance state when: deselected (CE HIGH, CE2 LOW  
OE is deasserted HIGH), or during a write operation (Chip  
Enabled and Write Enable WE LOW). The device also has an  
automatic power-down feature that significantly reduces  
power consumption by 99% when addresses are not toggling  
even when the chip is selected (Chip Enable CE LOW, CE2  
HIGH and both BHE and BLE are LOW). Reading from the  
device is accomplished by asserting the Chip Enables (CE  
LOW and CE2 HIGH) and Output Enable (OE) LOW while  
forcing the Write Enable (WE) HIGH. If Byte Low Enable (BLE)  
is LOW, then data from the memory location specified by the  
Features  
• Advanced low power MoBL® architecture  
• High speed: 70 ns  
• Wide voltage range:  
— VCC range: 2.7V to 3.3V  
• Low active power  
— Typical active current: 2 mA @ f = 1 MHz  
— Typical active current: 13 mA @ f = fMAX  
• Low standby power  
• Automatic power-down when deselected  
Functional Description[1]  
The CYK001M16SCCAU is a high-performance CMOS  
pseudo static RAMs (PSRAM) organized as 1 Mb words by 16  
bits that supports an asynchronous memory interface. This  
device features advanced circuit design to provide ultra-low  
address pins will appear on I/O0 to I/O7. If Byte High Enable  
(BHE) is LOW, then data from memory will appear on I/O8 to  
I/O15. See the Truth Table for a complete description of read  
and write modes.  
Logic Block Diagram  
DATA IN DRIVERS  
A
10  
A
9
8
7
6
5
4
3
2
1
0
A
A
A
A
A
1M x 16  
RAM Array  
I/O –I/O  
0
7
A
A
A
1T  
I/O –I/O  
8
15  
A
COLUMN DECODER  
BHE  
WE  
CE  
2
CE  
OE  
BLE  
CE  
2
Power -Down  
Circuit  
CE  
BHE  
BLE  
Note:  
1. For best-practice recommendations, please refer to the Cypress application note “System Design Guidelines” on http://www.cypress.com.  
Cypress Semiconductor Corporation  
Document #: 38-05426 Rev. **  
3901 North First Street  
San Jose, CA 95134  
408-943-2600  
Revised January 8, 2004  

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