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CYDM128B16-40BVXC PDF预览

CYDM128B16-40BVXC

更新时间: 2024-01-01 18:16:38
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 静态存储器内存集成电路
页数 文件大小 规格书
25页 517K
描述
Dual-Port SRAM, 8KX16, 40ns, CMOS, PBGA100, 6 X 6 MM, 1 MM HEIGHT, 0.50 MM PITCH, LEAD FREE, MO-195C, VFBGA-100

CYDM128B16-40BVXC 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:BGA包装说明:VFBGA, BGA100,10X10,20
针数:100Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.41
风险等级:5.79最长访问时间:40 ns
其他特性:ALSO OPERATES AT 2.5V AND 3V SUPPLYI/O 类型:COMMON
JESD-30 代码:S-PBGA-B100JESD-609代码:e1
长度:6 mm内存密度:131072 bit
内存集成电路类型:DUAL-PORT SRAM内存宽度:16
湿度敏感等级:3功能数量:1
端口数量:2端子数量:100
字数:8192 words字数代码:8000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:8KX16
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:VFBGA封装等效代码:BGA100,10X10,20
封装形状:SQUARE封装形式:GRID ARRAY, VERY THIN PROFILE, FINE PITCH
并行/串行:PARALLEL峰值回流温度(摄氏度):260
电源:1.8/3 V认证状态:Not Qualified
座面最大高度:1 mm最大待机电流:0.000006 A
最小待机电流:1.7 V子类别:SRAMs
最大压摆率:0.07 mA最大供电电压 (Vsup):1.9 V
最小供电电压 (Vsup):1.7 V标称供电电压 (Vsup):1.8 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Tin/Silver/Copper (Sn/Ag/Cu)
端子形式:BALL端子节距:0.5 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:20
宽度:6 mmBase Number Matches:1

CYDM128B16-40BVXC 数据手册

 浏览型号CYDM128B16-40BVXC的Datasheet PDF文件第2页浏览型号CYDM128B16-40BVXC的Datasheet PDF文件第3页浏览型号CYDM128B16-40BVXC的Datasheet PDF文件第4页浏览型号CYDM128B16-40BVXC的Datasheet PDF文件第5页浏览型号CYDM128B16-40BVXC的Datasheet PDF文件第6页浏览型号CYDM128B16-40BVXC的Datasheet PDF文件第7页 
CYDM256B16  
CYDM128B16  
CYDM064B16  
1.8V 4K/8K/16K x 16  
MoBL® Dual-Port Static RAM  
• Full asynchronous operation  
• Automatic power-down  
Features  
• True dual-ported memory cells that allow simultaneous  
• Pin select for Master or Slave  
access of the same memory location  
• Expandable data bus to 32 bits with Master/Slave chip  
• 4/8/16K × 16 organization  
• High-speed access: 40 ns  
• Ultra Low operating power  
— Active: ICC = 15 mA (typical) at 55 ns  
— Active: ICC = 25 mA (typical) at 40 ns  
— Standby: ISB3 = 2 µA (typical)  
select when using more than one device  
• On-chip arbitration logic  
• Semaphores included to permit software handshaking  
between ports  
• Input Read Registers and Output Drive Registers  
• INT flag for port-to-port communication  
• Separate upper-byte and lower-byte control  
• Industrial temperature ranges  
• Small footprint: Available in a 6x6 mm 100-pin  
Lead(Pb)-free fBGA  
• Port-independent 1.8V, 2.5V, and 3.0V I/Os  
Selection Guide for VCC = 1.8V  
CYDM256B16, CYDM128B16,  
CYDM256B16, CYDM128B16,  
CYDM064B16  
-40  
CYDM064B16  
-55  
Port I/O Voltages (P1-P2)  
Maximum Access Time  
Typical Operating Current  
Typical Standby Current for ISB1  
Typical Standby Current for ISB3  
1.8V-1.8V  
1.8V-1.8V  
Unit  
ns  
mA  
µA  
40  
25  
2
55  
15  
2
2
2
µA  
Selection Guide for VCC = 2.5V  
CYDM256B16, CYDM128B16,  
CYDM256B16, CYDM128B16,  
CYDM064B16  
-40  
CYDM064B16  
-55  
Port I/O Voltages (P1-P2)  
Maximum Access Time  
Typical Operating Current  
Typical Standby Current for ISB1  
Typical Standby Current for ISB3  
2.5V-2.5V  
2.5V-2.5V  
Unit  
ns  
mA  
µA  
40  
39  
6
55  
28  
6
4
4
µA  
Selection Guide for VCC = 3.0V  
CYDM256B16, CYDM128B16,  
CYDM256B16, CYDM128B16,  
CYDM064B16  
-40  
CYDM064B16  
-55  
Port I/O Voltages (P1-P2)  
Maximum Access Time  
Typical Operating Current  
Typical Standby Current for ISB1  
Typical Standby Current for ISB3  
3.0V-3.0V  
3.0V-3.0V  
Unit  
ns  
mA  
µA  
40  
49  
7
55  
42  
7
6
6
µA  
Cypress Semiconductor Corporation  
198 Champion Court  
San Jose, CA 95134-1709  
408-943-2600  
Document #: 001-00217 Rev. *D  
Revised February 15, 2006  

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