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CYDM256A16-35BVXC PDF预览

CYDM256A16-35BVXC

更新时间: 2024-01-11 17:16:09
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 存储内存集成电路静态存储器
页数 文件大小 规格书
25页 499K
描述
1.8V 4K/8K/16K x 16 and 8K/16K x 8 MoBL㈢ Dual-Port Static RAM

CYDM256A16-35BVXC 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:BGA包装说明:VFBGA, BGA100,10X10,20
针数:100Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.41
风险等级:5.84最长访问时间:35 ns
其他特性:ALSO OPERATES AT 2.5V AND 3V SUPPLYI/O 类型:COMMON
JESD-30 代码:S-PBGA-B100JESD-609代码:e1
长度:6 mm内存密度:262144 bit
内存集成电路类型:DUAL-PORT SRAM内存宽度:16
湿度敏感等级:3功能数量:1
端口数量:2端子数量:100
字数:16384 words字数代码:16000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:16KX16
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:VFBGA封装等效代码:BGA100,10X10,20
封装形状:SQUARE封装形式:GRID ARRAY, VERY THIN PROFILE, FINE PITCH
并行/串行:PARALLEL峰值回流温度(摄氏度):260
电源:1.8/3 V认证状态:Not Qualified
座面最大高度:1 mm最大待机电流:0.000006 A
最小待机电流:1.7 V子类别:SRAMs
最大压摆率:0.07 mA最大供电电压 (Vsup):1.9 V
最小供电电压 (Vsup):1.7 V标称供电电压 (Vsup):1.8 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Tin/Silver/Copper (Sn/Ag/Cu)
端子形式:BALL端子节距:0.5 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:20
宽度:6 mmBase Number Matches:1

CYDM256A16-35BVXC 数据手册

 浏览型号CYDM256A16-35BVXC的Datasheet PDF文件第2页浏览型号CYDM256A16-35BVXC的Datasheet PDF文件第3页浏览型号CYDM256A16-35BVXC的Datasheet PDF文件第4页浏览型号CYDM256A16-35BVXC的Datasheet PDF文件第5页浏览型号CYDM256A16-35BVXC的Datasheet PDF文件第6页浏览型号CYDM256A16-35BVXC的Datasheet PDF文件第7页 
CYDM256A16, CYDM128A16,  
CYDM064A16, CYDM128A08,  
CYDM064A08  
1.8V 4K/8K/16K x 16 and 8K/16K x 8  
MoBL® Dual-Port Static RAM  
• Full asynchronous operation  
• Automatic power-down  
Features  
• True dual-ported memory cells which allow simulta-  
• Pin select for Master or Slave  
neous access of the same memory location  
• 4/8/16K × 16 and 8/16K x 8 organization  
• High-speed access: 35 ns  
• Expandable data bus to 32 bits with Master/Slave chip  
select when using more than one device  
• On-chip arbitration logic  
• Ultra Low operating power  
• Semaphores included to permit software handshaking  
— Active: ICC = 15 mA (typical) at 55 ns  
— Active: ICC = 25 mA (typical) at 35 ns  
— Standby: ISB3 = 2 µA (typical)  
between ports  
• Input Read Registers and Output Drive Registers  
• INT flag for port-to-port communication  
• Separate upper-byte and lower-byte control  
• Industrial temperature ranges  
• Small footprint: Available in a 6x6 mm 100-pin  
Lead(Pb)-free fBGA  
• Supports 1.8V, 2.5V, and 3.0V I/Os  
Selection Guide for 1.8V  
CYDM256A16, CYDM128A16,  
CYDM256A16, CYDM128A16,  
CYDM064A16, CYDM128A08,  
CYDM064A08  
CYDM064A16, CYDM128A08,  
CYDM064A08  
-35  
-55  
Unit  
ns  
mA  
µA  
Maximum Access Time  
35  
25  
2
55  
15  
2
Typical Operating Current  
Typical Standby Current for ISB1  
Typical Standby Current for ISB3  
2
2
µA  
Selection Guide for 2.5V  
CYDM256A16, CYDM128A16,  
CYDM064A16, CYDM128A08,  
CYDM064A08  
CYDM256A16, CYDM128A16,  
CYDM064A16, CYDM128A08,  
CYDM064A08  
-35  
-55  
Unit  
ns  
mA  
µA  
Maximum Access Time  
35  
39  
6
55  
28  
6
Typical Operating Current  
Typical Standby Current for ISB1  
Typical Standby Current for ISB3  
4
4
µA  
Selection Guide for 3.0V  
CYDM256A16, CYDM128A16,  
CYDM064A16, CYDM128A08,  
CYDM064A08  
CYDM256A16, CYDM128A16,  
CYDM064A16, CYDM128A08,  
CYDM064A08  
-35  
-55  
Unit  
ns  
mA  
µA  
Maximum Access Time  
35  
49  
7
55  
42  
7
Typical Operating Current  
Typical Standby Current for ISB1  
Typical Standby Current for ISB3  
6
6
µA  
Cypress Semiconductor Corporation  
198 Champion Court  
San Jose, CA 95134-1709  
408-943-2600  
Document #: 38-06081 Rev. *F  
Revised October 31, 2005  

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