Datasheet > CYEL15B102Q-SXM

CYEL15B102Q-SXM

更新时间： 2024-05-23 22:23:05

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
35页	713K
描述
Our radiation tolerant, 2Mb, SPI Ferroelectric RAM (F-RAM) is one of the industry’s lowest power,

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CYEL15B102Q-SXM 数据手册

CYEL15B102Q

2-Mb (256K × 8) Serial (SPI) F-RAM

256K × 8, 25MHz, Military grade

Features

• Encapsulated plastic component for low-earth orbit satellite applications

• 2-Mb ferroelectric random access memory (F-RAM) logically organized as 256K

- High-endurance 10 trillion (10¹³) read/writes

- 121-year data retention (see the Data retention and endurance table)

- Infineon instant non-volatile write technology

- Advanced high-reliability ferroelectric process

• Very fast serial peripheral interface (SPI)

- Up to 25 MHz frequency

- Direct hardware replacement for serial flash and EEPROM

- Supports SPI mode 0 (0, 0) and mode 3 (1, 1)

• Sophisticated write protection scheme

- Hardware protection using the Write Protect (WP) pin

- Software protection using Write Disable instruction

- Software block protection for 1/4, 1/2, or entire array

• Device ID

- Manufacturer ID and Product ID

• Low power consumption

- 5 mA active current at 25 MHz

- 750 μA standby current

- 20 μA sleep mode current

• Low-voltage operation: V_DD= 2.0 V to 3.6 V

• Military temperature: –55°C to +125°C

• 8-pin small outline integrated circuit (SOIC) package

• AEC-Q006 compliant

• Restriction of hazardous substances (RoHS) compliant

• Guaranteed TID radiation performance of 50 krad by radiation lot acceptance testing (RLAT)

• Single event latchup immunity >106LET (115°C)

• Single lot date code and 100% guaranteed electrical testing

Datasheet

www.infineon.com

Please read the Important Notice and Warnings at the end of this document

page 1

002-36914 Rev. *A

2024-02-01

12 3 4 5 6 7...35

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