5秒后页面跳转
捷配首页

Datasheet > CY9C62256_05
CY9C62256_05 PDF预览

CY9C62256_05

更新时间： 2024-11-27 03:12:31
品牌 Logo 应用领域
赛普拉斯 - CYPRESS /
页数 文件大小 规格书
11页 329K
描述
32K x 8 Magnetic Nonvolatile CMOS RAM

阅读下载

中文翻译

获取价格

CY9C62256_05 数据手册

 浏览型号CY9C62256_05的Datasheet PDF文件第2页浏览型号CY9C62256_05的Datasheet PDF文件第3页浏览型号CY9C62256_05的Datasheet PDF文件第4页浏览型号CY9C62256_05的Datasheet PDF文件第5页浏览型号CY9C62256_05的Datasheet PDF文件第6页浏览型号CY9C62256_05的Datasheet PDF文件第7页 
PRELIMINARY  
CY9C62256  
32K x 8 Magnetic Nonvolatile CMOS RAM  
Features  
Functional Description  
• 100% form, fit, function-compatible with 32K × 8  
The CY9C62256 is a high-performance CMOS nonvolatile  
RAM employing an advanced magnetic RAM (MRAM)  
process. An MRAM is nonvolatile memory that operates as a  
fast read and write RAM. It provides data retention for more  
than ten years while eliminating the reliability concerns,  
functional disadvantages and system design complexities of  
battery-backed SRAM, EEPROM, Flash and FeRAM. Its fast  
writes and high write cycle endurance makes it superior to  
other types of nonvolatile memory.  
micropower SRAM (CY62256)  
— Fast Read and Write access: 70 ns  
— Voltage range: 4.5V–5.5V operation  
— Low power: 330 mW Active; 495 µW standby  
— Easy memory expansion with CE and OE features  
— TTL-compatible inputs and outputs  
— Automatic power-down when deselected  
The CY9C62256 operates very similarly to SRAM devices.  
Memory read and write cycles require equal times. The MRAM  
memory is nonvolatile due to its unique magnetic process.  
Unlike BBSRAM, the CY9C62256 is truly a monolithic nonvol-  
atile memory. It provides the same functional benefits of a fast  
write without the serious disadvantages associated with  
modules and batteries or hybrid memory solutions.  
These capabilities make the CY9C62256 ideal for nonvolatile  
memory applications requiring frequent or rapid writes in a  
bytewide environment.  
• Replaces 32K × 8 Battery Backed (BB)SRAM, SRAM,  
EEPROM, FeRAM or Flash memory  
• Data is automatically Write protected during power loss  
• Write Cycles Endurance: > 1015 cycles  
• Data Retention: > 10 Years  
• Shielded from external magnetic fields  
• Extra 64 Bytes for device identification and tracking  
• Temperature ranges  
The CY9C62256 is offered in both commercial and industrial  
temperature ranges.  
— Commercial: 0°C to 70°C  
— Industrial: – 40°C to 85°C  
• JEDEC STD 28-pin (300-mil) SOIC, and 28-pin TSOP-1  
packages. Also available in 450-mil wide (300-mil body  
width) 28-pin narrow SOIC.  
Logic Block Diagram  
Pin Configurations  
SOIC  
Top View  
A
28  
V
CC  
1
5
27 WE  
A
2
6
A
26  
A
3
7
4
A
A
4
25  
3
8
9
24  
A
A
5
2
A
10  
A
11  
A
12  
A
13  
A
14  
23  
22  
A
6
1
OE  
7
A
0
21  
20  
19  
18  
17  
8
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
0
1
2
3
4
5
6
CE  
I/O  
9
INPUTBUFFER  
10  
11  
12  
13  
14  
7
I/O  
I/O  
A
I/O  
I/O  
I/O  
6
5
4
3
11  
0
1
2
A
10  
A
16 I/O  
9
Silicon Sig.  
I/O  
GND  
15  
A
8
A
7
512x512  
ARRAY  
A
6
21  
20  
19  
18  
17  
16  
15  
14  
13  
12  
11  
10  
9
8
A
OE  
22  
23  
0
A
3
2
1
A
1
CE  
A
I/O  
A
2
24  
25  
26  
27  
28  
1
2
3
4
5
7
A
I/O  
I/O  
I/O  
I/O  
A
3
6
5
4
3
A
4
TSOP I  
WE  
CE  
POWER  
DOWN &  
WRITE  
Top View  
V
WE  
CC  
COLUMN  
GND  
A
5
(not to scale)  
DECODER  
I/O  
2
PROTECT  
A
6
I/O  
7
OE  
I/O  
1
A7  
I/O  
0
A
8
A
A
14  
9
A
A
A
13  
6
7
10  
11  
A
12  
Cypress Semiconductor Corporation  
•
3901 North First Street  
•
San Jose, CA 95134  
•
408-943-2600  
Document#: 38-15001 Rev. *F  
Revised March 21, 2005  
1234567...11

中文翻译

下载PDF

与CY9C62256_05相关器件

型号 品牌 获取价格 描述 数据表
CY9C62256-70PC CYPRESS

获取价格

 		32K x 8 Magnetic Nonvolatile CMOS RAM
CY9C62256-70PI CYPRESS

获取价格

 		32K x 8 Magnetic Nonvolatile CMOS RAM
CY9C62256-70PXI CYPRESS

获取价格

 		Memory Circuit, 32KX8, CMOS, PDIP28, 0.600 INCH, DIP-28
CY9C62256-70SC CYPRESS

获取价格

 		32K x 8 Magnetic Nonvolatile CMOS RAM
CY9C62256-70SI CYPRESS

获取价格

 		32K x 8 Magnetic Nonvolatile CMOS RAM
CY9C62256-70SNC CYPRESS

获取价格

 		32K x 8 Magnetic Nonvolatile CMOS RAM
CY9C62256-70SNI CYPRESS

获取价格

 		32K x 8 Magnetic Nonvolatile CMOS RAM
CY9C62256-70SNXC CYPRESS

获取价格

 		暂无描述
CY9C62256-70SNXI CYPRESS

获取价格

 		Memory Circuit, 32KX8, CMOS, PDSO28, 0.300 INCH, SOIC-28
CY9C62256-70SXI CYPRESS

获取价格

 		Memory Circuit, 32KX8, CMOS, PDSO28, 0.300 INCH, MO-119, SOIC-28

与CY9C62256_05相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证