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CY9C6264-70PC PDF预览

CY9C6264-70PC

更新时间: 2024-11-27 03:12:31
品牌 Logo 应用领域
赛普拉斯 - CYPRESS /
页数 文件大小 规格书
12页 370K
描述
8K x 8 Magnetic Nonvolatile CMOS RAM

CY9C6264-70PC 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:DIP
包装说明:0.600 INCH, DIP-28针数:28
Reach Compliance Code:compliantHTS代码:8542.32.00.71
风险等级:5.92最长访问时间:70 ns
JESD-30 代码:R-PDIP-T28长度:37.211 mm
内存密度:65536 bit内存集成电路类型:MEMORY CIRCUIT
内存宽度:8功能数量:1
端子数量:28字数:8192 words
字数代码:8000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:8KX8封装主体材料:PLASTIC/EPOXY
封装代码:DIP封装等效代码:DIP28,.6
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):235电源:5 V
认证状态:Not Qualified座面最大高度:5.08 mm
最大待机电流:0.00015 A子类别:SRAMs
最大压摆率:0.09 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:NO技术:CMOS
温度等级:COMMERCIAL端子形式:THROUGH-HOLE
端子节距:2.54 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:15.24 mm
Base Number Matches:1

CY9C6264-70PC 数据手册

 浏览型号CY9C6264-70PC的Datasheet PDF文件第2页浏览型号CY9C6264-70PC的Datasheet PDF文件第3页浏览型号CY9C6264-70PC的Datasheet PDF文件第4页浏览型号CY9C6264-70PC的Datasheet PDF文件第5页浏览型号CY9C6264-70PC的Datasheet PDF文件第6页浏览型号CY9C6264-70PC的Datasheet PDF文件第7页 
PRELIMINARY  
CY9C6264  
8K x 8 Magnetic Nonvolatile CMOS RAM  
JEDEC STD 28-pin DIP (600-mil), 28-pin (300-mil) SOIC  
Features  
and 28-pin TSOP-1 packages. Also available in 450-mil  
• 100% form, fit, function compatible with 8K × 8  
wide (300-mil body width) 28-pin narrow SOIC.  
micropower SRAM CY6264  
Functional Description  
— Fast Read and Write access: 70 ns  
— Voltage range: 4.5V–5.5V operation  
— Low active power: 330 mW (max.)  
Low standby power, CMOS: 495 µW (max.)  
— Easy memory expansion with CE and OE features  
— TTL-compatible inputs and outputs  
— Automatic power-down when deselected  
The CY9C6264 is a high-performance CMOS nonvolatile  
RAM employing an advanced magnetic RAM (MRAM)  
process. An MRAM is nonvolatile memory that operates as a  
fast read and write RAM. It provides data retention for more  
than ten years while eliminating the reliability concerns,  
functional disadvantages, and system design complexities of  
battery-backed SRAM, EEPROM, Flash and FeRAM. Its fast  
writes and high write cycle endurance makes it superior to  
other types of nonvolatile memory.  
The CY9C6264 operates very similarly to SRAM devices.  
Memory read and write cycles require equal times. The MRAM  
memory is nonvolatile due to its unique magnetic process.  
Unlike BBSRAM, the CY9C6264 is truly a monolithic nonvol-  
atile memory. It provides the same functional benefits of a fast  
write without the serious disadvantages associated with  
modules and batteries or hybrid memory solutions.  
• Replaces 8K × 8 Battery Backed (BB) SRAM, SRAM,  
EEPROM, FeRAM, or Flash memory  
• Data is automatically Write protected during power loss  
• Write cycle endurance: >1015 cycles  
• Data Retention: >10 Years  
• Shielded from external magnetic fields  
• Extra 64-bytes for device identification and tracking  
• Temperature ranges  
These capabilities make the CY9C6264 ideal for nonvolatile  
memory applications requiring frequent or rapid writes in a  
byte wide environment.  
Commercial: 0°C to 70°C  
Industrial: –40°C to +85°C  
The CY9C6264 is offered in both commercial and industrial  
temperature ranges.  
LogicBlockDiagram  
Pin Configurations  
SOIC/DIP  
Top View  
28  
V
CC  
1
NC  
A
27 WE  
2
4
CE  
26  
A
3
2
5
A
A
4
25  
3
6
24  
A
A
5
7
2
23  
22  
A
A
6
1
8
A
OE  
9
7
A
0
21  
20  
19  
18  
17  
A
10  
A
11  
A
12  
8
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
0
1
2
CE1  
9
INPUTBUFFER  
10  
11  
12  
13  
14  
I/O  
7
I/O  
6
A
9
I/O  
I/O  
I/O  
0
1
2
I/O  
5
A
8
A
16 I/O  
7
4
Silicon Sig.  
I/O  
GND  
15  
A
3
6
A
5
3
4
5
512 × 128  
ARRAY  
A
4
21  
20  
19  
18  
17  
16  
15  
14  
13  
12  
11  
10  
9
8
A
OE  
22  
23  
24  
25  
26  
27  
28  
1
2
3
4
5
0
A
3
A
1
CE1  
A
2
I/O  
7
A
2
A
1
I/O  
6
A
3
I/O  
5
CE2  
WE  
CE 2  
CE 1  
TSOP I  
I/O  
4
POWER  
DOWN &  
WRITE  
6
7
I/O  
3
Top View  
V
CC  
COLUMN  
WE  
GND  
(not to scale)  
NC  
DECODER  
I/O  
2
PROTECT  
A
4
I/O  
OE  
I/O  
1
A5  
I/O  
0
A
6
A
A
12  
7
A
11  
A8  
A9  
6
7
A
10  
Cypress Semiconductor Corporation  
3901 North First Street  
San Jose, CA 95134  
408-943-2600  
Document #: 38-15003 Rev. *D  
Revised January 25, 2005  

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