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CY7C1325G-133AXCT PDF预览

CY7C1325G-133AXCT

更新时间: 2024-11-24 15:18:03
品牌 Logo 应用领域
英飞凌 - INFINEON 静态存储器
页数 文件大小 规格书
24页 2335K
描述
Synchronous SRAM

CY7C1325G-133AXCT 数据手册

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CY7C1325G  
4-Mbit (256K × 18) Flow-Through  
Sync SRAM  
4-Mbit (256K  
× 18) Flow-Through Sync SRAM  
Features  
Functional Description  
256K × 18 common I/O  
The CY7C1325G is a 256K × 18 synchronous cache RAM  
designed to interface with high speed microprocessors with  
minimum glue logic. Maximum access delay from clock rise is  
6.5 ns (133 MHz version). A 2-bit on-chip counter captures the  
first address in a burst and increments the address automatically  
for the rest of the burst access. All synchronous inputs are gated  
by registers controlled by a positive-edge-triggered Clock Input  
(CLK). The synchronous inputs include all addresses, all data  
inputs, address-pipelining chip enable (CE1), depth-expansion  
chip enables (CE2 and CE3), burst control inputs (ADSC, ADSP,  
and ADV), write enables (BW[A:B], and BWE), and global write  
(GW). Asynchronous inputs include the output enable (OE) and  
the ZZ pin.  
3.3 V core power supply (VDD  
)
2.5 V or 3.3 V I/O power supply (VDDQ  
)
Fast clock-to-output times  
6.5 ns (133 MHz version)  
Provide high performance 2-1-1-1 access rate  
User selectable burst counter supporting Intel Pentium  
interleaved or linear burst sequences  
Separate processor and controller address strobes  
Synchronous self timed write  
The CY7C1325G allows either interleaved or linear burst  
sequences, selected by the MODE input pin. A HIGH selects an  
interleaved burst sequence, while a LOW selects a linear burst  
sequence. Burst accesses can be initiated with the processor  
address strobe (ADSP) or the cache controller address strobe  
(ADSC) inputs.  
Asynchronous output enable  
Available in Pb-free 100-pin TQFP package  
“ZZ” sleep mode option  
Addresses and chip enables are registered at rising edge of  
clock when either address strobe processor (ADSP) or address  
strobe controller (ADSC) are active. Subsequent burst  
addresses can be internally generated as controlled by the  
advance pin (ADV).  
The CY7C1325G operates from a +3.3 V core power supply  
while all outputs may operate with either a +2.5 or +3.3 V supply.  
All  
inputs  
and  
outputs  
are  
JEDEC-standard  
JESD8-5-compatible.  
For a complete list of related documentation, click here.  
Logic Block Diagram  
ADDRESS  
REGISTER  
A0,A1,A  
A[1:0]  
Q1  
MODE  
ADV  
CLK  
BURST  
COUNTER AND  
LOGIC  
CLR  
Q0  
ADSC  
ADSP  
DQ  
B,DQP B  
DQ  
B,DQP B  
WRITE DRIVER  
WRITE REGISTER  
BW  
B
MEMORY  
ARRAY  
OUTPUT  
BUFFERS  
DQs  
DQP  
DQP  
SENSE  
AMPS  
A
B
DQ  
A,DQP A  
DQ A,DQP A  
WRITE REGISTER  
WRITE DRIVER  
BW  
A
BWE  
GW  
INPUT  
REGISTERS  
ENABLE  
REGISTER  
CE  
CE  
1
2
3
CE  
OE  
SLEEP  
CONTROL  
ZZ  
Errata: For information on silicon errata, see "Errata" on page 21. Details include trigger conditions, devices affected, and proposed workaround.  
Cypress Semiconductor Corporation  
Document Number: 38-05518 Rev. *R  
198 Champion Court  
San Jose, CA 95134-1709  
408-943-2600  
Revised November 4, 2016  

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