CY7C1326F
2-Mb (128K x 18) Pipelined Sync SRAM
counter for internal burst operation. All synchronous inputs are
gated by registers controlled by a positive-edge-triggered
Features
• Registered inputs and outputs for pipelined operation
• 128K × 18 common I/O architecture
• 3.3V core power supply
• 3.3V I/O operation
• Fast clock-to-output times
Clock Input (CLK). The synchronous inputs include all
addresses, all data inputs, address-pipelining Chip Enable
(
), depth-expansion Chip Enables (CE and
), Burst
CE3
CE1
2
Control inputs (
,
,
and
), Write Enables
ADV
ADSC ADSP
(
and ), and Global Write (
BWE
). Asynchronous
GW
BW[A:B]
inputs include the Output Enable ( ) and the ZZ pin.
OE
Addresses and chip enables are registered at rising edge of
— 4.0 ns (for 133-MHz device)
— 4.5 ns (for 100-MHz device)
clock when either Address Strobe Processor (
) or
ADSP
Address Strobe Controller (
) are active. Subsequent
ADSC
burst addresses can be internally generated as controlled by
the Advance pin ( ).
• Provide high-performance 3-1-1-1 access rate
ADV
• User-selectable burst counter supporting Intel
Address, data inputs, and write controls are registered on-chip
to initiate a self-timed Write cycle.This part supports Byte Write
operations (see Pin Descriptions and Truth Table for further
details). Write cycles can be one to two bytes wide as
Pentium® interleaved or linear burst sequences
• Separate processor and controller address strobes
• Synchronous self-timed writes
• Asynchronous output enable
• Offered in JEDEC-standard 100-pin TQFP package
• “ZZ” Sleep Mode Option
Functional Description[1]
controlled by the Byte Write control inputs.
when active
GW
causes all bytes to be written.
LOW
The CY7C1326F operates from a +3.3V core power supply
while all outputs also operate with a +3.3V supply. All inputs
and outputs are JEDEC-standard JESD8-5-compatible.
The CY7C1326F SRAM integrates 131,072 x18 SRAM cells
with advanced synchronous peripheral circuitry and a two-bit
Logic Block Diagram
ADDRESS
A0, A1, A
REGISTER
A[1:0]
2
MODE
Q1
ADV
CLK
BURST
COUNTER
AND
LOGIC
CLR
Q0
ADSC
ADSP
DQB,DQPB
DQB,DQPB
WRITE REGISTER
WRITE DRIVER
OUTPUT
BUFFERS
BWB
DQs
DQP
DQP
OUTPUT
REGISTERS
SENSE
AMPS
MEMORY
ARRAY
A
B
DQA,DQPA
E
DQA,DQPA
WRITE REGISTER
WRITE DRIVER
BWA
BWE
INPUT
REGISTERS
GW
ENABLE
REGISTER
CE1
CE2
PIPELINED
ENABLE
CE3
OE
1
Note:
1. For best-practices recommendations, please refer to the Cypress application note System Design Guidelines on www.cypress.com.
Cypress Semiconductor Corporation
•
3901 North First Street
•
San Jose, CA 95134
•
408-943-2600
Document #: 38-05424 Rev. **
Revised January 25, 2004