Datasheet > 存储 > SRAM> CY7C1319BV18-300BZC

CY7C1319BV18-300BZC

更新时间： 2024-11-20 05:19:11

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		存储内存集成电路静态存储器双倍数据速率时钟
页数	文件大小	规格书
28页	480K
描述
18-Mbit DDR-II SRAM 4-Word Burst Architecture

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

CY7C1319BV18-300BZC 技术参数

是否无铅：	含铅	是否Rohs认证：	不符合
生命周期：	Obsolete	零件包装代码：	BGA
包装说明：	13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165	针数：	165
Reach Compliance Code：	compliant	ECCN代码：	3A991.B.2.A
HTS代码：	8542.32.00.41	风险等级：	5.91
Is Samacsys：	N	最长访问时间：	0.45 ns
其他特性：	PIPELINED ARCHITECTURE	最大时钟频率 (fCLK)：	300 MHz
I/O 类型：	COMMON	JESD-30 代码：	R-PBGA-B165
JESD-609代码：	e0	长度：	15 mm
内存密度：	18874368 bit	内存集成电路类型：	DDR SRAM
内存宽度：	18	湿度敏感等级：	3
功能数量：	1	端子数量：	165
字数：	1048576 words	字数代码：	1000000
工作模式：	SYNCHRONOUS	最高工作温度：	70 °C
最低工作温度：		组织：	1MX18
输出特性：	3-STATE	封装主体材料：	PLASTIC/EPOXY
封装代码：	LBGA	封装等效代码：	BGA165,11X15,40
封装形状：	RECTANGULAR	封装形式：	GRID ARRAY, LOW PROFILE
并行/串行：	PARALLEL	峰值回流温度（摄氏度）：	220
电源：	1.5/1.8,1.8 V	认证状态：	Not Qualified
座面最大高度：	1.4 mm	最大待机电流：	0.26 A
最小待机电流：	1.7 V	子类别：	SRAMs
最大压摆率：	0.55 mA	最大供电电压 (Vsup)：	1.9 V
最小供电电压 (Vsup)：	1.7 V	标称供电电压 (Vsup)：	1.8 V
表面贴装：	YES	技术：	CMOS
温度等级：	COMMERCIAL	端子面层：	Tin/Lead (Sn/Pb)
端子形式：	BALL	端子节距：	1 mm
端子位置：	BOTTOM	处于峰值回流温度下的最长时间：	NOT SPECIFIED
宽度：	13 mm	Base Number Matches：	1

CY7C1319BV18-300BZC 数据手册

浏览型号CY7C1319BV18-300BZC的Datasheet PDF文件第2页

浏览型号CY7C1319BV18-300BZC的Datasheet PDF文件第3页

浏览型号CY7C1319BV18-300BZC的Datasheet PDF文件第4页

浏览型号CY7C1319BV18-300BZC的Datasheet PDF文件第5页

浏览型号CY7C1319BV18-300BZC的Datasheet PDF文件第6页

浏览型号CY7C1319BV18-300BZC的Datasheet PDF文件第7页

CY7C1317BV18

CY7C1917BV18

CY7C1319BV18

CY7C1321BV18

18-Mbit DDR-II SRAM 4-Word

Burst Architecture

Features

Functional Description

• 18-Mbit density (2M x 8, 2M x 9, 1M x 18, 512K x 36)

• 300-MHz clock for high bandwidth

The CY7C1317BV18, CY7C1917BV18, CY7C1319BV18, and

CY7C1321BV18 are 1.8V Synchronous Pipelined SRAM

equipped with DDR-II (Double Data Rate) architecture. The

DDR-II consists of an SRAM core with advanced synchronous

peripheral circuitry and a two-bit burst counter. Addresses for

Read and Write are latched on alternate rising edges of the

input (K) clock. Write data is registered on the rising edges of

both K and K. Read data is driven on the rising edges of C and

C if provided, or on the rising edge of K and K if C/C are not

provided. Each address location is associated with four 8-bit

words in the case of CY7C1317BV18 and four 9-bit words in

the case of CY7C1917BV18 that burst sequentially into or out

of the device. The burst counter always starts with “00” inter-

nally in the case of CY7C1317BV18 and CY7C1917BV18. On

CY7C1319BV18 and CY7C1321BV18, the burst counter

takes in the last two significant bits of the external address and

bursts four 18-bit words in the case of CY7C1319BV18, and

four 36-bit words in the case of CY7C1321BV18, sequentially

into or out of the device.

• 4-Word burst for reducing address bus frequency

• Double Data Rate (DDR) interfaces

(data transferred at 600MHz) @ 300 MHz

• Two input clocks (K and K) for precise DDR timing

— SRAM uses rising edges only

• Two input clocks for output data (C and C) to minimize

clock-skew and flight-time mismatches

• Echo clocks (CQ and CQ) simplify data capture in

high-speed systems

• Synchronous internally self-timed writes

• 1.8V core power supply with HSTL inputs and outputs

• Variable drive HSTL output buffers

• Expanded HSTL output voltage (1.4V–V_DD

)

Asynchronous inputs include output impedance matching

input (ZQ). Synchronous data outputs (Q, sharing the same

physical pins as the data inputs, D) are tightly matched to the

two output echo clocks CQ/CQ, eliminating the need for

separately capturing data from each individual DDR-II SRAM

in the system design. Output data clocks (C/C) enable

maximum system clocking and data synchronization flexibility.

• Available in 165-ball FBGA package (13 x 15 x 1.4 mm)

• Offered in both lead-free and non-lead free packages

• JTAG 1149.1 compatible test access port

• Delay Lock Loop (DLL) for accurate data placement

Configurations

All synchronous inputs pass through input registers controlled

by the K or K input clocks. All data outputs pass through output

registers controlled by the C or C (or K or K in a single clock

domain) input clocks. Writes are conducted with on-chip

synchronous self-timed write circuitry.

CY7C1317BV18 – 2M x 8

CY7C1917BV18 – 2M x 9

CY7C1319BV18 – 1M x 18

CY7C1321BV18 – 512K x 36

Selection Guide

300 MHz

300

278 MHz

250 MHz

250

200 MHz

200

167 MHz

167

Unit

MHz

Maximum Operating Frequency

Maximum Operating Current

278

530

550

500

450

400

Cypress Semiconductor Corporation

Document Number: 38-05622 Rev. *C

•

198 Champion Court

•

San Jose, CA 95134-1709

•

408-943-2600

Revised June 27, 2006

12 3 4 5 6 7...28

中文翻译

下载PDF

与CY7C1319BV18-300BZC相关器件

型号	品牌	获取价格	描述	数据表
CY7C1319BV18-300BZI	CYPRESS	获取价格	18-Mbit DDR-II SRAM 4-Word Burst Architecture
CY7C1319BV18-300BZXC	CYPRESS	获取价格	18-Mbit DDR-II SRAM 4-Word Burst Architecture
CY7C1319BV18-300BZXI	CYPRESS	获取价格	18-Mbit DDR-II SRAM 4-Word Burst Architecture
CY7C1319CV18	CYPRESS	获取价格	18-Mbit DDR-II SRAM 4-Word Burst Architecture
CY7C1319CV18-167BZC	CYPRESS	获取价格	18-Mbit DDR-II SRAM 4-Word Burst Architecture
CY7C1319CV18-167BZI	CYPRESS	获取价格	18-Mbit DDR-II SRAM 4-Word Burst Architecture
CY7C1319CV18-167BZXC	CYPRESS	获取价格	18-Mbit DDR-II SRAM 4-Word Burst Architecture
CY7C1319CV18-167BZXI	CYPRESS	获取价格	18-Mbit DDR-II SRAM 4-Word Burst Architecture
CY7C1319CV18-200BZC	CYPRESS	获取价格	18-Mbit DDR-II SRAM 4-Word Burst Architecture
CY7C1319CV18-200BZI	CYPRESS	获取价格	18-Mbit DDR-II SRAM 4-Word Burst Architecture

与CY7C1319BV18-300BZC相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

25
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

17
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

49
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

46

产品中心

服务支持

精选活动

关于我们

帮助中心

CY7C1319BV18-300BZC

CY7C1319BV18-300BZC 技术参数

CY7C1319BV18-300BZC 数据手册

与CY7C1319BV18-300BZC相关器件

与CY7C1319BV18-300BZC相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

CY7C1319BV18-300BZC

CY7C1319BV18-300BZC 技术参数

CY7C1319BV18-300BZC 数据手册

与CY7C1319BV18-300BZC相关器件

与CY7C1319BV18-300BZC相关文章

您还可以找

您在本页遇到什么问题？