Datasheet > CY7C11501KV18

CY7C11501KV18

更新时间： 2024-11-24 09:43:35

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		静态存储器双倍数据速率
页数	文件大小	规格书
29页	850K
描述
18-Mbit DDR II+ SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency)

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数据手册

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CY7C11501KV18 数据手册

CY7C11461KV18, CY7C11571KV18

CY7C11481KV18, CY7C11501KV18

18-Mbit DDR II+ SRAM 2-Word Burst

Architecture (2.0 Cycle Read Latency)

18-Mbit DDR II+ SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency)

Features

Functional Description

■ 18-Mbit Density (2M x 8, 2M x 9, 1M x 18, 512K x 36)

■ 450 MHz Clock for High Bandwidth

The CY7C11461KV18, CY7C11571KV18, CY7C11481KV18,

and CY7C11501KV18 are 1.8V Synchronous Pipelined SRAMs

equipped with DDR II+ architecture. The DDR II+ consists of an

SRAM core with advanced synchronous peripheral circuitry.

Addresses for read and write are latched on alternate rising

edges of the input (K) clock. Write data is registered on the rising

edges of both K and K. Read data is driven on the rising edges

of K and K. Each address location is associated with two 8-bit

words (CY7C11461KV18), 9-bit words (CY7C11571KV18),

■ 2-word Burst for reducing Address Bus Frequency

■ Double Data Rate (DDR) Interfaces

(data transferred at 900 MHz) at 450 MHz

■ Available in 2.0 Clock Cycle Latency

■ Two Input Clocks (K and K) for Precise DDR Timing

❐ SRAM uses rising edges only

18-bit

words

(CY7C11481KV18),

36-bit

words

(CY7C11501KV18) that burst sequentially into or out of the

device.

■ Echo Clocks (CQ and CQ) simplify Data Capture in High Speed

Systems

Asynchronous inputs include an output impedance matching

input (ZQ). Synchronous data outputs (Q, sharing the same

physical pins as the data inputs D) are tightly matched to the two

output echo clocks CQ/CQ, eliminating the need for separately

capturing data from each individual DDR SRAM in the system

design.

■ Data Valid Pin (QVLD) to indicate valid Data on the Output

■ Synchronous Internally Self Timed Writes

■ DDR II+ operates with 2.0 Cycle Read Latency when DOFF is

asserted HIGH

All synchronous inputs pass through input registers controlled by

the K or K input clocks. All data outputs pass through output

registers controlled by the K or K input clocks. Writes are

conducted with on-chip synchronous self-timed write circuitry.

■ Operates similar to DDR I Device with 1 Cycle Read Latency

when DOFF is asserted LOW

[1]

■ Core V_DD= 1.8V ± 0.1V; I/O V_DDQ= 1.4V to V_DD

❐ Supports both 1.5V and 1.8V I/O supply

These devices are down bonded from the 65 nm 72M

QDRII+/DDRII+ devices and hence have the same I_DD/I_SB1

values and JTAG ID code as the equivalent 72M device options.

For details refer to the application note AN53189, 65 nm

Technology Interim QDRII+/DDRII+ SRAM Device Family

Description.

■ HSTL Inputs and Variable Drive HSTL Output Buffers

■ Available in 165-ball FBGA Package (13 x 15 x 1.4 mm)

■ Offered in both Pb-free and non Pb-free Packages

■ JTAG 1149.1 compatible Test Access Port

Table 1. Selection Guide

450 400 375 333

Description

Unit

■ Phase Locked Loop (PLL) for Accurate Data Placement

MHz MHz MHz MHz

Maximum Operating

Frequency

450 400 375 333 MHz

Configurations

With Read cycle latency of 2.0 cycles:

CY7C11461KV18 – 2M x 8

Maximum Operating

Current

x8 630 580 550 510 mA

x9 630 580 550 510

x18 650 590 570 520

x36 820 750 710 640

CY7C11571KV18 – 2M x 9

CY7C11481KV18 – 1M x 18

CY7C11501KV18 – 512K x 36

Cypress Semiconductor Corporation

Document Number: 001-53198 Rev. *F

•

198 Champion Court

•

San Jose, CA 95134-1709

•

408-943-2600

Revised January 31, 2011

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与CY7C11501KV18相关器件

型号	品牌	获取价格	描述	数据表
CY7C11501KV18-400BZXC	CYPRESS	获取价格	18-Mbit DDR II+ SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency)
CY7C11501KV18-400BZXI	CYPRESS	获取价格	18-Mbit DDR II+ SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency)
CY7C1150KV18	CYPRESS	获取价格	18-Mbit DDR II+ SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency)
CY7C1150KV18-400BZC	CYPRESS	获取价格	18-Mbit DDR II+ SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency)
CY7C1150KV18-400BZXC	CYPRESS	获取价格	18-Mbit DDR II+ SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency)
CY7C1150KV18-400BZXI	CYPRESS	获取价格	18-Mbit DDR II+ SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency)
CY7C1150KV18-400BZXI	INFINEON	获取价格	DDR-II+ CIO
CY7C1150KV18-450BZC	CYPRESS	获取价格	18-Mbit DDR II+ SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency)
CY7C1150V18	CYPRESS	获取价格	18-Mbit DDR-II+ SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency)
CY7C1150V18-300BZC	CYPRESS	获取价格	DDR SRAM, 512KX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165

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