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CY7C1041GE30-10ZSXI PDF预览

CY7C1041GE30-10ZSXI

更新时间： 2024-12-01 20:50:47
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
21页 370K
描述
Standard SRAM, 256KX16, 10ns, CMOS, PDSO44, TSOP2-44

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CY7C1041GE30-10ZSXI 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：TSOP2, TSOP44,.46,32Reach Compliance Code：compliant
ECCN代码：3A991.B.2.AHTS代码：8542.32.00.41
风险等级：2.14最长访问时间：10 ns
I/O 类型：COMMONJESD-30 代码：R-PDSO-G44
长度：18.415 mm内存密度：4194304 bit
内存集成电路类型：STANDARD SRAM内存宽度：16
功能数量：1端子数量：44
字数：262144 words字数代码：256000
工作模式：ASYNCHRONOUS最高工作温度：85 °C
最低工作温度：-40 °C组织：256KX16
输出特性：3-STATE封装主体材料：PLASTIC/EPOXY
封装代码：TSOP2封装等效代码：TSOP44,.46,32
封装形状：RECTANGULAR封装形式：SMALL OUTLINE, THIN PROFILE
并行/串行：PARALLEL电源：2.5/3.3 V
认证状态：Not Qualified座面最大高度：1.194 mm
最小待机电流：1 V子类别：SRAMs
最大供电电压 (Vsup)：3.6 V最小供电电压 (Vsup)：2.2 V
标称供电电压 (Vsup)：3 V表面贴装：YES
技术：CMOS温度等级：INDUSTRIAL
端子形式：GULL WING端子节距：0.8 mm
端子位置：DUAL宽度：10.16 mm
Base Number Matches：1

CY7C1041GE30-10ZSXI 数据手册

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CY7C1041G  
CY7C1041GE  
4-Mbit (256K words × 16 bit) Static RAM  
with Error-Correcting Code (ECC)  
4-Mbit (256K words  
× 16 bit) Static RAM with Error-Correcting Code (ECC)  
Data writes are performed by asserting the Chip Enable (CE) and  
Write Enable (WE) inputs LOW, while providing the data on I/O0  
through I/O15 and address on A0 through A17 pins. The Byte High  
Enable (BHE) and Byte Low Enable (BLE) inputs control write  
operations to the upper and lower bytes of the specified memory  
location. BHE controls I/O8 through I/O15 and BLE controls I/O0  
through I/O7.  
Features  
■ High speed  
❐ tAA = 10 ns/15 ns  
■ Embedded ECC for single-bit error correction[1]  
■ Low active and standby currents  
❐ Active current: ICC = 38-mA typical  
❐ Standby current: ISB2 = 6-mA typical  
Data reads are performed by asserting the Chip Enable (CE) and  
Output Enable (OE) inputs LOW and providing the required  
■ Operating voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, and  
4.5 V to 5.5 V  
address on the address lines. Read data is accessible on the I/O  
lines (I/O0 through I/O15). Byte accesses can be performed by  
asserting the required byte enable signal (BHE or BLE) to read  
either the upper byte or the lower byte of data from the specified  
address location.  
■ 1.0-V data retention  
■ TTL-compatible inputs and outputs  
All I/Os (I/O0 through I/O15) are placed in a high-impedance state  
during the following events:  
■ Error indication (ERR) pin to indicate 1-bit error detection and  
correction  
■ The device is deselected (CE HIGH)  
■ Pb-free 44-pin SOJ, 44-pin TSOP II, and 48-ball VFBGA  
packages  
■ The control signals (OE, BLE, BHE) are de-asserted  
On the CY7C1041GE devices, the detection and correction of a  
single-bit error in the accessed location is indicated by the  
assertion of the ERR output (ERR = HIGH)[1]. See the Truth  
Table on page 14 for a complete description of read and write  
modes.  
Functional Description  
CY7C1041G and CY7C1041GE are high-performance CMOS  
fast static RAM devices with embedded ECC. Both devices are  
offered in single chip-enable option and in multiple pin  
configurations. The CY7C1041GE device includes an ERR pin  
that signals an error-detection and correction event during a read  
cycle.  
The logic block diagram is on page 2.  
Product Portfolio  
Power Dissipation  
Speed  
Operating ICC, (mA)  
FeaturesandOptions(seePin  
VCC Range  
(V)  
(ns)  
Standby, ISB2  
Product [2]  
Range  
Configurations on page 4)  
(mA)  
f = fmax  
10/15  
Typ [3]  
–
Max  
40  
Typ [3]  
Max  
CY7C1041G(E)18 Single Chip Enable  
Industrial 1.65 V–2.2 V  
2.2 V–3.6 V  
15  
10  
10  
6
8
CY7C1041G(E)30  
38  
45  
Optional ERR pins  
CY7C1041G(E)  
4.5 V–5.5 V  
38  
45  
Notes  
1. This device does not support automatic write-back on error detection.  
2. The ERR pin is available only for devices which have ERR option “E” in the ordering code. Refer Ordering Information on page 15 for details.  
3. Typical values are included only for reference and are not guaranteed or tested. Typical values are measured at V = 1.8 V (for a V range of 1.65 V–2.2 V),  
CC  
CC  
V
= 3 V (for a V range of 2.2 V–3.6 V), and V = 5 V (for a V range of 4.5 V–5.5 V), T = 25 °C.  
CC  
CC CC CC A  
Cypress Semiconductor Corporation  
Document Number: 001-91368 Rev. *M  
•
198 Champion Court  
•
San Jose, CA 95134-1709  
•
408-943-2600  
Revised May 9, 2017  
 
 
 
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CY7C1041GN18 CYPRESS

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