CY7C1041
256K x 16 Static RAM
written into the location specified on the address pins (A
Features
0
through A ). If Byte High Enable (BHE) is LOW, then data
17
• High speed
from I/O pins (I/O through I/O ) is written into the location
8
15
specified on the address pins (A through A ).
0
17
— t = 15 ns
AA
Reading from the device is accomplished by taking Chip En-
able (CE) and Output Enable (OE) LOW while forcing the Write
Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then
data from the memory location specified by the address pins
will appear on I/O to I/O . If Byte High Enable (BHE) is LOW,
• Low active power
— 1430 mW (max.)
• Low CMOS standby power (L version)
— 2.75 mW (max.)
0
7
then data from memory will appear on I/O to I/O . See the
8
15
2.0V Data Retention (400 W at 2.0V retention)
•
µ
truth table at the back of this data sheet for a complete descrip-
tion of read and write modes.
• Automatic power-down when deselected
• TTL-compatible inputs and outputs
• Easy memory expansion with CE and OE features
The input/output pins (I/O through I/O ) are placed in a
0
15
high-impedance state when the device is deselected (CE
HIGH), the outputs are disabled (OE HIGH), the BHE and BLE
are disabled (BHE, BLE HIGH), or during a write operation (CE
LOW, and WE LOW).
Functional Description
The CY7C1041 is a high-performance CMOS static RAM or-
ganized as 262,144 words by 16 bits.
The CY7C1041 is available in a standard 44-pin 400-mil-wide
body width SOJ and 44-pin TSOP II package with center pow-
er and ground (revolutionary) pinout.
Writing to the device is accomplished by taking Chip Enable
(CE) and Write Enable (WE) inputs LOW. If Byte Low Enable
(BLE) is LOW, then data from I/O pins (I/O through I/O ), is
0
7
Logic Block Diagram
Pin Configuration
SOJ
TSOP II
Top View
INPUT BUFFER
A
44
1
0
A
A
A
A
OE
BHE
BLE
I/O
I/O
14
I/O
0
17
16
15
A
43
42
41
40
39
38
1
A
2
3
4
5
6
1
A
2
A
2
I/O0 – I/O7
I/O8 – I/O15
256K x 16
ARRAY
A
3
4
A
3
A
A
4
1024 x 4096
A
5
6
CE
I/O
A
7
0
15
A
7
8
37
36
35
34
33
I/O
8
1
2
A
I/O
9
13
10
11
12
13
I/O
I/O
3
CC
SS
12
V
V
SS
COLUMN
DECODER
V
V
CC
I/O
32
I/O
4
11
I/O
31
30
29
28
I/O
10
14
15
16
5
I/O
I/O
6
9
8
I/O
I/O
7
WE 17
NC
BHE
18
27
26
25
A
14
A
5
WE
CE
OE
19
A
6
A
13
A
20
21
22
A
7
12
A
BLE
A
24
23
11
8
9
A
A
10
1041–1
1041–2
Selection Guide
7C1041-12
7C1041-15
7C1041-17
7C1041-20
7C1041-25
Maximum Access Time (ns)
12
280
3
15
260
3
17
250
3
20
230
3
25
220
3
Maximum Operating Current (mA)
Maximum CMOS Standby Current Com’l
(mA)
Com’l
L
0.5
6
0.5
6
0.5
6
0.5
6
0.5
6
Ind’l
Shaded areas contain preliminary information.
Cypress Semiconductor Corporation
•
3901 North First Street
•
San Jose
•
CA 95134
•
408-943-2600
October 4, 1999