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CY7C1020L-10VC PDF预览

CY7C1020L-10VC

更新时间: 2024-02-11 23:09:22
品牌 Logo 应用领域
赛普拉斯 - CYPRESS /
页数 文件大小 规格书
9页 178K
描述
32K x 16 Static RAM

CY7C1020L-10VC 技术参数

生命周期:Obsolete零件包装代码:SOJ
包装说明:SOJ,针数:44
Reach Compliance Code:unknownECCN代码:3A991.B.2.B
HTS代码:8542.32.00.41风险等级:5.6
最长访问时间:10 ns其他特性:AUTOMATIC POWER-DOWN
JESD-30 代码:R-PDSO-J44长度:28.575 mm
内存密度:524288 bit内存集成电路类型:STANDARD SRAM
内存宽度:16功能数量:1
端口数量:1端子数量:44
字数:32768 words字数代码:32000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:32KX16
输出特性:3-STATE可输出:YES
封装主体材料:PLASTIC/EPOXY封装代码:SOJ
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:PARALLEL认证状态:Not Qualified
座面最大高度:3.7592 mm最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子形式:J BEND
端子节距:1.27 mm端子位置:DUAL
宽度:10.16 mmBase Number Matches:1

CY7C1020L-10VC 数据手册

 浏览型号CY7C1020L-10VC的Datasheet PDF文件第1页浏览型号CY7C1020L-10VC的Datasheet PDF文件第3页浏览型号CY7C1020L-10VC的Datasheet PDF文件第4页浏览型号CY7C1020L-10VC的Datasheet PDF文件第5页浏览型号CY7C1020L-10VC的Datasheet PDF文件第6页浏览型号CY7C1020L-10VC的Datasheet PDF文件第7页 
CY7C1020  
Current into Outputs (LOW)......................................... 20 mA  
Maximum Ratings  
Static Discharge Voltage ........................................... >2001V  
(per MIL-STD-883, Method 3015)  
(Above which the useful life may be impaired. For user guide-  
lines, not tested.)  
Latch-Up Current..................................................... >200 mA  
Storage Temperature .................................65°C to +150°C  
Ambient Temperature with  
Power Applied............................................. 55°C to +125°C  
Operating Range  
[1]  
Ambient  
Supply Voltage on V to Relative GND .... 0.5V to +7.0V  
CC  
[2]  
Range  
Temperature  
V
CC  
DC Voltage Applied to Outputs  
[1]  
Commercial  
0°C to +70°C  
4.5V5.5V  
in High Z State .....................................0.5V to V +0.5V  
CC  
[1]  
DC Input Voltage ..................................0.5V to V +0.5V  
CC  
Electrical Characteristics Over the Operating Range  
7C1020-10  
7C1020-12  
7C1020-15  
Parameter  
Description  
Output HIGH Voltage  
Output LOW Voltage  
Input HIGH Voltage  
Test Conditions  
= Min., I = 4.0 mA  
Min. Max. Min. Max. Min. Max. Unit  
V
V
V
2.4  
2.4  
2.4  
V
V
OH  
CC  
CC  
OH  
V
= Min., I = 8.0 mA  
0.4  
6.0  
0.8  
+1  
0.4  
6.0  
0.8  
+1  
0.4  
6.0  
0.8  
+1  
OL  
OL  
V
2.2  
0.5  
1  
2.2  
0.5  
1  
2.2  
0.5  
1  
V
IH  
IL  
[1]  
V
Input LOW Voltage  
V
I
Input Load Current  
GND < V < V  
CC  
µA  
µA  
IX  
I
I
Output Leakage  
Current  
GND < V < V ,  
CC  
2  
+2  
2  
+2  
2  
+2  
OZ  
I
Output Disabled  
I
I
I
V
Operating  
V
= Max.,  
= 0 mA,  
180  
150  
170  
140  
160  
130  
mA  
mA  
CC  
CC  
CC  
Supply Current  
I
OUT  
L
L
L
f = f  
= 1/t  
MAX  
RC  
Automatic CE  
Power-Down Current  
TTL Inputs  
Max. V , CE > V  
IH  
V
V
20  
10  
20  
10  
20  
10  
SB1  
SB2  
CC  
> V or  
IN  
IN  
IH  
< V , f = f  
IL  
MAX  
Automatic CE  
Power-Down Current  
CMOS Inputs  
Max. V  
CE > V 0.3V,  
V
,
3
3
3
mA  
CC  
CC  
100  
100  
100  
µA  
> V 0.3V,  
CC  
IN  
or V < 0.3V, f = 0  
IN  
Notes:  
1. IL (min.) = 2.0V for pulse durations of less than 20 ns.  
2. TA is the case temperature.  
V
2

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