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CY7C1020V33-12ZC PDF预览

CY7C1020V33-12ZC

更新时间: 2024-01-31 14:00:36
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 存储内存集成电路静态存储器光电二极管
页数 文件大小 规格书
9页 179K
描述
32K x 16 Static RAM

CY7C1020V33-12ZC 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:TSOP2
包装说明:TSOP2-44针数:44
Reach Compliance Code:unknown风险等级:5.79
最长访问时间:12 nsJESD-30 代码:R-PDSO-G44
JESD-609代码:e0长度:18.41 mm
内存密度:524288 bit内存集成电路类型:STANDARD SRAM
内存宽度:16湿度敏感等级:NOT SPECIFIED
功能数量:1端子数量:44
字数:32768 words字数代码:32000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:32KX16
封装主体材料:PLASTIC/EPOXY封装代码:TSOP2
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:COMMERCIAL座面最大高度:1.2 mm
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:TIN LEAD端子形式:GULL WING
端子节距:0.8 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:10.16 mm
Base Number Matches:1

CY7C1020V33-12ZC 数据手册

 浏览型号CY7C1020V33-12ZC的Datasheet PDF文件第2页浏览型号CY7C1020V33-12ZC的Datasheet PDF文件第3页浏览型号CY7C1020V33-12ZC的Datasheet PDF文件第4页浏览型号CY7C1020V33-12ZC的Datasheet PDF文件第5页浏览型号CY7C1020V33-12ZC的Datasheet PDF文件第6页浏览型号CY7C1020V33-12ZC的Datasheet PDF文件第7页 
fax id: 1075  
CY7C1020V  
32K x 16 Static RAM  
(BLE) is LOW, then data from I/O pins (I/O through I/O ), is  
Features  
1
8
written into the location specified on the address pins (A  
0
• 3.3V operation (3.0V - 3.6V)  
• High speed  
through A ). If byte high enable (BHE) is LOW, then data from  
14  
I/O pins (I/O through I/O ) is written into the location speci-  
9
16  
fied on the address pins (A through A ).  
0
14  
— t = 10 ns  
AA  
Reading from the device is accomplished by taking chip en-  
able (CE) and output enable (OE) LOW while forcing the write  
enable (WE) HIGH. If byte low enable (BLE) is LOW, then data  
from the memory location specified by the address pins will  
• Low active power  
— 540 mW (max., 12 ns)  
• Very Low standby power  
appear on I/O to I/O . If byte high enable (BHE) is LOW, then  
1
8
— 330 W (max., “L” version)  
µ
data from memory will appear on I/O to I/O . See the truth  
9
16  
• Automatic power-down when deselected  
• Independent Control of Upper and Lower bytes  
table at the back of this datasheet for a complete description  
of read and write modes.  
Available in 44-pin TSOP II and 400-mil SOJ  
The input/output pins (I/O through I/O ) are placed in a  
1
16  
high-impedance state when the device is deselected (CE  
HIGH), the outputs are disabled (OE HIGH), the BHE and BLE  
are disabled (BHE, BLE HIGH), or during a write operation (CE  
LOW, and WE LOW).  
Functional Description  
The CY7C1020V is a high-performance CMOS static RAM or-  
ganized as 32,768 words by 16 bits. This device has an auto-  
matic power-down feature that significantly reduces power  
consumption when deselected.  
The CY7C1020V is available in standard 44-pin TSOP type II  
and 400-mil-wide SOJ packages.  
Writing to the device is accomplished by taking chip enable  
(CE) and write enable (WE) inputs LOW. If byte low enable  
Logic Block Diagram  
Pin Configuration  
SOJ / TSOP II  
DATA IN DRIVERS  
Top View  
44  
NC  
1
2
3
4
A
1
0
A
43  
42  
41  
40  
39  
38  
A
A
A
A
14  
13  
12  
11  
A
2
A6  
A5  
OE  
5
6
BHE  
BLE  
I/O  
A4  
A3  
A2  
A1  
A0  
CE  
32K x 16  
RAM Array  
I/O1 – I/O8  
I/O9 – I/O16  
I/O  
7
1
16  
37  
36  
35  
34  
33  
I/O  
I/O  
8
I/O  
I/O  
2
3
15  
14  
13  
9
10  
I/O  
V
SS  
I/O  
4
CC  
V
11  
12  
SS  
V
V
CC  
I/O  
32  
31  
30  
29  
28  
27  
I/O  
I/O  
13  
5
6
7
8
12  
11  
I/O  
I/O  
I/O  
14  
15  
16  
I/O  
I/O  
10  
9
COLUMN DECODER  
WE 17  
NC  
A
18  
19  
20  
21  
22  
10  
A
9
8
A
3
BHE  
26  
25  
A
4
WE  
CE  
OE  
A
A
5
A
A
7
24  
23  
6
NC  
NC  
BLE 1020V-1  
1020V-2  
Selection Guide  
7C1020V-10  
10  
7C1020V-12  
7C1020V-15  
7C1020V-20  
Maximum Access Time (ns)  
12  
120  
90  
1
15  
110  
80  
1
20  
100  
70  
1
Maximum Operating Current (mA)  
130  
100  
1
L
L
Maximum CMOS Standby Current (mA)  
0.1  
0.1  
0.1  
0.1  
Cypress Semiconductor Corporation  
3901 North First Street  
San Jose  
CA 95134  
408-943-2600  
October 1996 – Revised April 13, 1998  

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