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CY7C1019B-15ZXCT PDF预览

CY7C1019B-15ZXCT

更新时间: 2024-10-28 20:05:47
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
8页 319K
描述
Standard SRAM, 128KX8, 15ns, CMOS, PDSO32, LEAD FREE, TSOP2-32

CY7C1019B-15ZXCT 技术参数

生命周期:Obsolete零件包装代码:TSOP2
包装说明:LEAD FREE, TSOP2-32针数:32
Reach Compliance Code:unknownECCN代码:3A991.B.2.B
HTS代码:8542.32.00.41风险等级:5.34
最长访问时间:15 nsJESD-30 代码:R-PDSO-G32
JESD-609代码:e3长度:20.95 mm
内存密度:1048576 bit内存集成电路类型:STANDARD SRAM
内存宽度:8功能数量:1
端子数量:32字数:131072 words
字数代码:128000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:128KX8封装主体材料:PLASTIC/EPOXY
封装代码:TSOP2封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE并行/串行:PARALLEL
认证状态:Not Qualified座面最大高度:1.2 mm
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:TIN端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
宽度:10.16 mmBase Number Matches:1

CY7C1019B-15ZXCT 数据手册

 浏览型号CY7C1019B-15ZXCT的Datasheet PDF文件第1页浏览型号CY7C1019B-15ZXCT的Datasheet PDF文件第3页浏览型号CY7C1019B-15ZXCT的Datasheet PDF文件第4页浏览型号CY7C1019B-15ZXCT的Datasheet PDF文件第5页浏览型号CY7C1019B-15ZXCT的Datasheet PDF文件第6页浏览型号CY7C1019B-15ZXCT的Datasheet PDF文件第7页 
CY7C1019B  
Current into Outputs (LOW)......................................... 20 mA  
Maximum Ratings  
Static Discharge Voltage............................................>2001V  
(per MIL-STD-883, Method 3015)  
(Above which the useful life may be impaired. For user guide-  
lines, not tested.)  
Latch-Up Current.....................................................>200 mA  
Storage Temperature .................................65°C to +150°C  
Ambient Temperature with  
Power Applied.............................................55°C to +125°C  
Operating Range  
Ambient  
Supply Voltage on VCC to Relative GND[1] .... –0.5V to +7.0V  
Range  
Temperature[2]  
VCC  
DC Voltage Applied to Outputs  
Commercial  
0°C to +70°C  
5V ± 10%  
in High Z State[1] ....................................–0.5V to VCC + 0.5V  
DC Input Voltage[1].................................–0.5V to VCC + 0.5V  
Electrical Characteristics Over the Operating Range  
-12  
-15  
Parameter  
Description  
Output HIGH Voltage  
Output LOW Voltage  
Input HIGH Voltage  
Input LOW Voltage[1]  
Input Leakage Current  
Test Conditions  
Min.  
Max.  
Min.  
Max.  
Unit  
VOH  
VOL  
VIH  
VIL  
VCC = Min., IOH = – 4.0 mA  
VCC = Min., IOL = 8.0 mA  
2.4  
2.4  
V
V
0.4  
0.4  
2.2  
–0.3  
–1  
VCC + 0.3  
2.2  
–0.3  
–1  
VCC + 0.3  
V
0.8  
+1  
+5  
0.8  
+1  
+5  
V
IIX  
GND < VI < VCC  
µA  
µA  
IOZ  
Output Leakage Current GND < VI < VCC  
,
–5  
–5  
Output Disabled  
ICC  
VCC Operating  
Supply Current  
VCC = Max., IOUT = 0 mA,  
f = fMAX = 1/tRC  
140  
40  
130  
40  
mA  
mA  
ISB1  
Automatic CE  
Max. VCC, CE > VIH  
Power- Down Current  
—TTL Inputs  
VIN > VIH or VIN < VIL, f = fMAX  
ISB2  
Automatic CE  
Power-Down Current  
Max. VCC, CE > VCC – 0.3V,  
10  
10  
mA  
VIN > VCC – 0.3V,  
—CMOS Inputs  
or VIN < 0.3V, f = 0  
Capacitance[3]  
Parameter  
Description  
Test Conditions  
Max.  
Unit  
CIN  
Input Capacitance  
Output Capacitance  
TA = 25°C, f = 1 MHz,  
VCC = 5.0V  
6
8
pF  
pF  
COUT  
AC Test Loads and Waveforms  
R1 480Ω  
ALL INPUT PULSES  
90%  
R1 480Ω  
5V  
5V  
OUTPUT  
3.0V  
GND  
90%  
OUTPUT  
10%  
10%  
R2  
255Ω  
R2  
255Ω  
30 pF  
5 pF  
3 ns  
3 ns  
INCLUDING  
JIG AND  
SCOPE  
INCLUDING  
JIG AND  
SCOPE  
(b)  
(a)  
Equivalent to: THÉVENIN EQUIVALENT  
167Ω  
1.73V  
OUTPUT  
Notes:  
1. V (min.) = –2.0V for pulse durations of less than 20 ns.  
IL  
2. T is the “Instant On” case temperature.  
A
3. Tested initially and after any design or process changes that may affect these parameters.  
Document #: 38-05026 Rev. *C  
Page 2 of 8  

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