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CY7C025V-25ACT PDF预览

CY7C025V-25ACT

更新时间: 2024-09-18 19:45:23
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 静态存储器内存集成电路
页数 文件大小 规格书
19页 248K
描述
Dual-Port SRAM, 8KX16, 25ns, CMOS, PQFP100, PLASTIC, TQFP-100

CY7C025V-25ACT 技术参数

生命周期:Obsolete零件包装代码:QFP
包装说明:LFQFP,针数:100
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.41风险等级:5.61
最长访问时间:25 ns其他特性:INTERRUPT FLAG
JESD-30 代码:S-PQFP-G100长度:14 mm
内存密度:131072 bit内存集成电路类型:DUAL-PORT SRAM
内存宽度:16功能数量:1
端口数量:2端子数量:100
字数:8192 words字数代码:8000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:8KX16
输出特性:3-STATE可输出:YES
封装主体材料:PLASTIC/EPOXY封装代码:LFQFP
封装形状:SQUARE封装形式:FLATPACK, LOW PROFILE, FINE PITCH
并行/串行:PARALLEL认证状态:Not Qualified
座面最大高度:1.6 mm最小待机电流:2 V
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子形式:GULL WING端子节距:0.5 mm
端子位置:QUAD宽度:14 mm
Base Number Matches:1

CY7C025V-25ACT 数据手册

 浏览型号CY7C025V-25ACT的Datasheet PDF文件第2页浏览型号CY7C025V-25ACT的Datasheet PDF文件第3页浏览型号CY7C025V-25ACT的Datasheet PDF文件第4页浏览型号CY7C025V-25ACT的Datasheet PDF文件第5页浏览型号CY7C025V-25ACT的Datasheet PDF文件第6页浏览型号CY7C025V-25ACT的Datasheet PDF文件第7页 
1
CY7C024V/025V/026V  
PRELIMINARY  
CY7C0241V/0251V/036V  
3.3V 4K/8K/16K x 16/18 Dual-Port Static RAM  
• Automatic power-down  
Features  
• Expandable data bus to 32/36 bits or more using Mas-  
ter/Slave chip select when using more than one device  
• On-chip arbitration logic  
• Semaphores included to permit software handshaking  
between ports  
• INT flag for port-to-port communication  
• Separate upper-byte and lower-byte control  
• Pin select for Master or Slave  
• True dual-ported memory cells which allow simulta-  
neous access of the same memory location  
• 4/8/16K x 16 organization (CY7C024V/025V/026V)  
• 4/8K x 18 organization (CY7C0241V/0251V)  
• 16K x 18 organization (CY7C036V)  
• 0.35-micron CMOS for optimum speed/power  
[1]  
• High-speed access: 15 /20/25 ns  
• Low operating power  
• Commercial and industrial temperature ranges  
• Available in 100-pin TQFP  
Active: I = 115 mA (typical)  
CC  
• Pin-compatible and functionally equivalent to  
IDT70V24, 70V25, and 7V0261.  
— Standby: I  
= 10 A (typical)  
µ
SB3  
• Fully asynchronous operation  
Logic Block Diagram  
R/W  
R/W  
UB  
L
R
R
UB  
L
CE  
CE  
LB  
L
R
R
LB  
L
OE  
OE  
R
L
8/9  
8/9  
8/9  
8/9  
[2]  
[2]  
I/O  
–I/O  
I/O  
–I/O  
8/9L  
8/9L  
15/17L  
15/17R  
[3]  
I/O –I/O  
[3]  
I/O  
Control  
I/O  
Control  
I/O –I/O  
0L  
7/8L  
0L  
7/8R  
12/13/14  
12/13/14  
[4]  
[4]  
Address  
Decode  
Address  
Decode  
True Dual-Ported  
A
A
–A  
A
A
–A  
11/12/13R  
0L  
0L  
11/1213L  
0R  
0R  
RAM Array  
12/13/14  
12/13/14  
–A[4]  
–A[4]  
11/12/13R  
11/12/13L  
CE  
CE  
OE  
Interrupt  
Semaphore  
Arbitration  
L
R
R
OE  
L
R/W  
R/W  
SEM  
L
R
R
SEM  
L
[5]  
[5]  
BUSY  
BUSY  
INT  
UB  
L
R
R
R
R
INT  
L
UB  
L
LB  
M/S  
LB  
L
Notes:  
1. Call for availability.  
2. I/O8–I/O15 for x16 devices; I/O9–I/O17 for x18 devices.  
3. I/O0–I/O7 for x16 devices; I/O0–I/O8 for x18 devices.  
4. A0–A11 for 4K devices; A0–A12 for 8K devices; A0–A13 for 16K devices.  
5. BUSY is an output in master mode and an input in slave mode.  
For the most recent information, visit the Cypress web site at www.cypress.com  
Cypress Semiconductor Corporation  
3901 North First Street  
San Jose  
CA 95134  
408-943-2600  
October 18, 1999  

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