Datasheet > CY62136V

CY62136V

更新时间： 2024-11-05 04:53:23

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		/
页数	文件大小	规格书
13页	352K
描述
2-Mbit (128K x 16) Static RAM

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CY62136V 数据手册

CY62136V MoBL^®

2-Mbit (128K x 16) Static RAM

This is ideal for providing More Battery Life™ (MoBL^®) in

portable applications such as cellular telephones. The device

also has an automatic power-down feature that significantly

reduces power consumption by 99% when addresses are not

toggling. The device can also be put into standby mode when

deselected (CE HIGH). The input/output pins (I/O₀through

I/O₁₅) are placed in a high-impedance state when: deselected

(CE HIGH), outputs are disabled (OE HIGH), BHE and BLE

are disabled (BHE, BLE HIGH), or during a write operation (CE

LOW, and WE LOW).

Features

• High speed

— 55 ns

• Temperature Ranges

— Industrial: –40°C to 85°C

— Automotive: –40°C to 125°C

• Wide voltage range

— 2.7V – 3.6V

Writing to the device is accomplished by taking Chip Enable

(CE) and Write Enable (WE) inputs LOW. If Byte Low Enable

(BLE) is LOW, then data from I/O pins (I/O₀through I/O₇), is

written into the location specified on the address pins (A₀

through A₁₆). If Byte High Enable (BHE) is LOW, then data

from I/O pins (I/O₈through I/O₁₅) is written into the location

specified on the address pins (A₀through A₁₆).

• Ultra-low active, standby power

• Easy memory expansion with CE and OE features

• TTL-compatible inputs and outputs

• Automatic power-down when deselected

• CMOS for optimum speed/power

Reading from the device is accomplished by taking Chip

Enable (CE) and Output Enable (OE) LOW while forcing the

Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW,

then data from the memory location specified by the address

pins will appear on I/O₀to I/O₇. If Byte High Enable (BHE) is

LOW, then data from memory will appear on I/O₈to I/O₁₅. See

the Truth Table at the back of this data sheet for a complete

description of read and write modes.

• Available in a Pb-free and non Pb-free 44-pin TSOP

Type II (forward pinout) and 48-ball FBGA packages

Functional Description^[1]

The CY62136V is a high-performance CMOS static RAM

organized as 128K words by 16 bits. This device features

advanced circuit design to provide ultra-low active current.

Logic Block Diagram

DATA IN DRIVERS

A₁₀

A₉

A₈

A₇

A₆

A₅

A₄

A₃

A₂

128K x 16

RAM Array

I/O₀– I/O₇

I/O₈– I/O₁₅

A₁

A₀

COLUMN DECODER

BHE

BLE

Note:

1. For best practice recommendations, please refer to the Cypress application note “System Design Guidelines” on http://www.cypress.com.

Cypress Semiconductor Corporation

Document #: 38-05087 Rev. *D

•

198 Champion Court

•

San Jose, CA 95134-1709

•

408-943-2600

Revised July 19, 2006

12 3 4 5 6 7...13

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与CY62136V相关器件

型号	品牌	获取价格	描述	数据表
CY62136V18LL-70BAI	ETC	获取价格	x16 SRAM
CY62136VLL	CYPRESS	获取价格	128K x 16 Static RAM
CY62136VLL-55BAI	CYPRESS	获取价格	2-Mbit (128K x 16) Static RAM
CY62136VLL-55ZI	CYPRESS	获取价格	128K x 16 Static RAM
CY62136VLL-55ZIT	CYPRESS	获取价格	Standard SRAM, 128KX16, 55ns, CMOS, PDSO44, TSOP2-44
CY62136VLL-55ZSI	CYPRESS	获取价格	2-Mbit (128K x 16) Static RAM
CY62136VLL-55ZXI	CYPRESS	获取价格	2-Mbit (128K x 16) Static RAM
CY62136VLL-55ZXIT	CYPRESS	获取价格	Standard SRAM, 128KX16, 55ns, CMOS, PDSO44, LEAD FREE, TSOP2-44
CY62136VLL-70BAI	CYPRESS	获取价格	128K x 16 Static RAM
CY62136VLL-70BAIT	CYPRESS	获取价格	Standard SRAM, 128KX16, 70ns, CMOS, PBGA48, 7 X 7 MM, 1.20 MM HEIGHT, FBGA-48

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