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CY62136VLL-55ZSI PDF预览

CY62136VLL-55ZSI

更新时间： 2024-10-01 22:15:47
品牌 Logo 应用领域
赛普拉斯 - CYPRESS /
页数 文件大小 规格书
11页 174K
描述
2-Mbit (128K x 16) Static RAM

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CY62136VLL-55ZSI 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Obsolete零件包装代码：TSOP2
包装说明：TSOP2-44针数：44
Reach Compliance Code：compliantECCN代码：3A991.B.2.A
HTS代码：8542.32.00.41风险等级：5.83
最长访问时间：55 nsI/O 类型：COMMON
JESD-30 代码：R-PDSO-G44JESD-609代码：e0
长度：18.415 mm内存密度：2097152 bit
内存集成电路类型：STANDARD SRAM内存宽度：16
湿度敏感等级：3功能数量：1
端子数量：44字数：131072 words
字数代码：128000工作模式：ASYNCHRONOUS
最高工作温度：85 °C最低工作温度：-40 °C
组织：128KX16输出特性：3-STATE
封装主体材料：PLASTIC/EPOXY封装代码：TSOP2
封装等效代码：TSOP44,.46,32封装形状：RECTANGULAR
封装形式：SMALL OUTLINE, THIN PROFILE并行/串行：PARALLEL
峰值回流温度（摄氏度）：240电源：3/3.3 V
认证状态：Not Qualified座面最大高度：1.194 mm
最大待机电流：0.0000075 A最小待机电流：1 V
子类别：SRAMs最大压摆率：0.02 mA
最大供电电压 (Vsup)：3.6 V最小供电电压 (Vsup)：2.7 V
标称供电电压 (Vsup)：3 V表面贴装：YES
技术：CMOS温度等级：INDUSTRIAL
端子面层：TIN LEAD端子形式：GULL WING
端子节距：0.8 mm端子位置：DUAL
处于峰值回流温度下的最长时间：30宽度：10.16 mm
Base Number Matches：1

CY62136VLL-55ZSI 数据手册

 浏览型号CY62136VLL-55ZSI的Datasheet PDF文件第2页浏览型号CY62136VLL-55ZSI的Datasheet PDF文件第3页浏览型号CY62136VLL-55ZSI的Datasheet PDF文件第4页浏览型号CY62136VLL-55ZSI的Datasheet PDF文件第5页浏览型号CY62136VLL-55ZSI的Datasheet PDF文件第6页浏览型号CY62136VLL-55ZSI的Datasheet PDF文件第7页 
CY62136V MoBL®  
2-Mbit (128K x 16) Static RAM  
This is ideal for providing More Battery Life™ (MoBL®) in  
portable applications such as cellular telephones. The device  
also has an automatic power-down feature that significantly  
reduces power consumption by 99% when addresses are not  
toggling. The device can also be put into standby mode when  
deselected (CE HIGH). The input/output pins (I/O0 through  
I/O15) are placed in a high-impedance state when: deselected  
(CE HIGH), outputs are disabled (OE HIGH), BHE and BLE  
are disabled (BHE, BLE HIGH), or during a write operation (CE  
LOW, and WE LOW).  
Features  
• Temperature Ranges  
— Commercial : 0°C to 70°C  
— Industrial : −40°C to 85°C  
— Automotive : −40°C to 125°C  
• High speed: 55 ns and 70 ns  
• 70-ns speed bin offered in both Industrial and  
Automotive grades  
Writing to the device is accomplished by taking Chip Enable  
(CE) and Write Enable (WE) inputs LOW. If Byte Low Enable  
(BLE) is LOW, then data from I/O pins (I/O0 through I/O7), is  
written into the location specified on the address pins (A0  
through A16). If Byte High Enable (BHE) is LOW, then data  
from I/O pins (I/O8 through I/O15) is written into the location  
specified on the address pins (A0 through A16).  
• Wide voltage range: 2.7V-3.6V  
• Ultra-low active, standby power  
• Easy memory expansion with CE and OE features  
• TTL-compatible inputs and outputs  
• Automatic power-down when deselected  
• CMOS for optimum speed/power  
Reading from the device is accomplished by taking Chip  
Enable (CE) and Output Enable (OE) LOW while forcing the  
Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW,  
then data from the memory location specified by the address  
pins will appear on I/O0 to I/O7. If Byte High Enable (BHE) is  
LOW, then data from memory will appear on I/O8 to I/O15. See  
the Truth Table at the back of this data sheet for a complete  
description of read and write modes.  
• Package available in a standard 44-pin TSOP Type II  
(forward pinout) package  
Functional Description[1]  
The CY62136V is a high-performance CMOS static RAM  
organized as 128K words by 16 bits. This device features  
advanced circuit design to provide ultra-low active current.  
Logic Block Diagram  
DATA IN DRIVERS  
A10  
A9  
A8  
A7  
A6  
A5  
128K x 16  
A4  
A3  
A2  
RAM Array  
2048 x 1024  
I/O0 – I/O7  
I/O8 – I/O15  
A1  
A0  
COLUMN DECODER  
BHE  
WE  
CE  
OE  
BLE  
Note:  
1. For best practice recommendations, please refer to the Cypress application note “System Design Guidelines” on http://www.cypress.com.  
Cypress Semiconductor Corporation  
Document #: 38-05087 Rev. *B  
•
3901 North First Street  
•
San Jose, CA 95134  
•
408-943-2600  
Revised September 24, 2004  
1234567...11

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