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CXK5B16120J-12 PDF预览

CXK5B16120J-12

更新时间: 2024-11-30 22:32:35
品牌 Logo 应用领域
索尼 - SONY 存储内存集成电路静态存储器光电二极管信息通信管理
页数 文件大小 规格书
10页 238K
描述
65536-word X 16-bit High Speed Bi-CMOS Static RAM

CXK5B16120J-12 技术参数

生命周期:Obsolete零件包装代码:SOJ
包装说明:SOJ, SOJ44,.44针数:44
Reach Compliance Code:unknownECCN代码:3A991.B.2.B
HTS代码:8542.32.00.41风险等级:5.8
Is Samacsys:N最长访问时间:12 ns
I/O 类型:COMMONJESD-30 代码:R-PDSO-J44
长度:28.58 mm内存密度:1048576 bit
内存集成电路类型:STANDARD SRAM内存宽度:16
功能数量:1端子数量:44
字数:65536 words字数代码:64000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:64KX16
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:SOJ封装等效代码:SOJ44,.44
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:PARALLEL电源:3.3 V
认证状态:Not Qualified座面最大高度:3.75 mm
最大待机电流:0.01 A最小待机电流:3 V
子类别:SRAMs最大压摆率:0.27 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:BICMOS温度等级:COMMERCIAL
端子形式:J BEND端子节距:1.27 mm
端子位置:DUAL宽度:10.16 mm
Base Number Matches:1

CXK5B16120J-12 数据手册

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-12  
CXK5B16120J/TM  
65536-word × 16-bit High Speed Bi-CMOS Static RAM  
For the availability of this product, please contact the sales office.  
Description  
CXK5B16120J  
44 pin SOJ (Plastic)  
CXK5B16120TM  
44 pin TSOP (Plastic)  
CXK5B16120J/TM is a high speed 1M bit Bi-  
CMOS static RAM organized as 65536 words by 16  
bits. Operating on a single 3.3V supply this  
asynchronous IC is suitable for use in high speed  
and low power applications.  
Features  
Single 3.3V Supply  
Fast access time  
3.3V±0.3V  
12ns (Max.)  
10mA (Max.)  
Function  
Low stand-by current:  
65536-word × 16-bit static RAM  
Low power operation 972mW (Max.)  
Package line-up  
Structure  
Dual Vcc/Vss  
Silicon gate Bi-CMOS IC  
CXK5B16120J  
400mil 44pin SOJ Package  
CXK5B16120TM 400mil 44pin TSOP Package  
Block Diagram  
Pin configuration  
(Top View)  
Pin Description  
Symbol  
Description  
A14  
A4  
A5  
A6  
A7  
OE  
UB  
44  
43  
42  
41  
40  
1
2
3
4
5
6
7
8
9
1
A15  
A9  
A0 to A15 Address input  
I/O1 Data input output  
to I/O8 (lower byte I/O)  
A3  
A2  
Memory  
Matrix  
256 × 4096  
Vcc  
A8  
Row  
Decoder  
Buffer  
A1  
A12  
A13  
A11  
A10  
A0  
I/O9  
Data input output  
CE  
39 LB  
to I/O16 (upper byte I/O)  
GND  
I/O1  
I/O2  
I/O3  
I/O4  
Vcc  
GND  
I/O5  
I/O6  
I/O7  
I/O8  
WE  
A15  
38 I/O16  
CE  
WE  
Chip enable input  
Write enable input  
Output enable input  
Lower byte select input  
Upper byte select input  
+3.3V Power supply  
Ground  
I/O15  
I/O14  
I/O13  
37  
36  
35  
34  
33  
32  
31  
30  
29  
28  
27  
A5  
A4  
A3  
0
GND OE  
Vcc  
11  
12  
I/O Gate  
Column  
Decoder  
LB  
I/O12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
A0  
A2  
A1  
Buffer  
I/O11 UB  
I/O10  
Vcc  
I/O9  
A6  
A7  
GND  
NC  
A8  
NC  
No connection  
UB  
LB  
A14  
A13  
A12  
NC  
26 A9  
25  
24  
23  
A10  
A11  
NC  
I/O  
Buffer  
WE  
OE  
CE  
I/O1 I/O16  
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by  
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the  
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.  
– 1 –  
E93605A57-PK  

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