生命周期: | Obsolete | 零件包装代码: | TSOP2 |
包装说明: | TSOP2, TSOP44,.46,32 | 针数: | 44 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8542.32.00.41 | 风险等级: | 5.82 |
最长访问时间: | 120 ns | I/O 类型: | COMMON |
JESD-30 代码: | R-PDSO-G44 | 长度: | 18.41 mm |
内存密度: | 1048576 bit | 内存集成电路类型: | STANDARD SRAM |
内存宽度: | 16 | 功能数量: | 1 |
端子数量: | 44 | 字数: | 65536 words |
字数代码: | 64000 | 工作模式: | ASYNCHRONOUS |
最高工作温度: | 85 °C | 最低工作温度: | -25 °C |
组织: | 64KX16 | 输出特性: | 3-STATE |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | TSOP2 |
封装等效代码: | TSOP44,.46,32 | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE, THIN PROFILE | 并行/串行: | PARALLEL |
电源: | 3/3.3 V | 认证状态: | Not Qualified |
座面最大高度: | 1.2 mm | 最大待机电流: | 0.000028 A |
最小待机电流: | 2 V | 子类别: | SRAMs |
最大压摆率: | 0.05 mA | 最大供电电压 (Vsup): | 3.6 V |
最小供电电压 (Vsup): | 2.7 V | 标称供电电压 (Vsup): | 3.3 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | OTHER | 端子形式: | GULL WING |
端子节距: | 0.8 mm | 端子位置: | DUAL |
宽度: | 10.16 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
CXK5T81000AM | SONY |
获取价格 |
131072-word x 8-bit High Speed CMOS Static RAM | |
CXK5T81000AM-10LLX | SONY |
获取价格 |
131072-word x 8-bit High Speed CMOS Static RAM | |
CXK5T81000AM-12LLX | SONY |
获取价格 |
131072-word x 8-bit High Speed CMOS Static RAM | |
CXK5T81000ATM | SONY |
获取价格 |
131072-word x 8-bit High Speed CMOS Static RAM | |
CXK5T81000ATM/AYM/AM-10LLX | ETC |
获取价格 |
131072-word x 8-bit High Speed CMOS Static RAM | |
CXK5T81000ATM/AYM/AM-12LLX | ETC |
获取价格 |
131072-word x 8-bit High Speed CMOS Static RAM | |
CXK5T81000ATM-10LLX | SONY |
获取价格 |
131072-word x 8-bit High Speed CMOS Static RAM | |
CXK5T81000ATM-12LLX | SONY |
获取价格 |
131072-word x 8-bit High Speed CMOS Static RAM | |
CXK5T81000ATN | SONY |
获取价格 |
131072-word X 8-bit High Speed CMOS Static RAM | |
CXK5T81000ATN/AYN-10LLX | ETC |
获取价格 |
131072-word x 8-bit High Speed CMOS Static RAM |