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CXK5T81000ATN/AYN-12LLX PDF预览

CXK5T81000ATN/AYN-12LLX

更新时间: 2024-11-30 23:44:43
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其他 - ETC /
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10页 171K
描述
131072-word x 8-bit High Speed CMOS Static RAM

CXK5T81000ATN/AYN-12LLX 数据手册

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CXK5T81000ATN/AYN -10LLX/12LLX  
131072-word × 8-bit High Speed CMOS Static RAM  
Preliminary  
For the availability of this product, please contact the sales office.  
Description  
CXK5T81000AYN  
CXK5T81000ATN  
The CXK5T81000ATN/AYN is a high speed  
CMOS static RAM organized as 131072-words by  
8-bits.  
32 pin TSOP (Plastic)  
32 pin TSOP (Plastic)  
Special feature are low power consumption and  
high speed.  
The CXK5T81000ATN/AYN is a suitable RAM for  
portable equipment with battery back up.  
Features  
Block Diagram  
Extended operating temperature range:  
–25 to +85°C  
A10  
A11  
A9  
Wide supply voltage range operation: 2.7 to 3.6V  
Fast access time:  
3.0V operation -10LLX  
-12LLX  
(Access time)  
100ns (Max.)  
120ns (Max.)  
85ns (Max.)  
100ns (Max.)  
28µA (Max.)  
VCC  
A8  
Memory  
Matrix  
Row  
Decoder  
A13  
Buffer  
A15  
A16  
A14  
A12  
A7  
GND  
1024 × 1024  
3.3V operation -10LLX  
-12LLX  
Low standby current:  
Low data retention current: 24µA (Max.)  
Low power data retention: 2.0V (Min.)  
A6  
A5  
A4  
I/O Gate  
Column  
Decoder  
Buffer  
A3  
Package 8mm × 13.4mm 32 pin TSOP package  
A2  
A1  
A0  
Function  
131072-word × 8-bit static RAM  
OE  
Buffer  
WE  
Structure  
I/O Buffer  
Silicon gate CMOS IC  
CE1  
CE2  
I/O1 I/O8  
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by  
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the  
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.  
– 1 –  
PE96726-PS  

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