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CXK5T8257BM

更新时间: 2024-11-30 22:18:51
品牌 Logo 应用领域
索尼 - SONY /
页数 文件大小 规格书
10页 211K
描述
32768-word X 8-bit High Speed CMOS Static RAM

CXK5T8257BM 数据手册

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CXK5T8257BTM/BYM/BM -10LLX/12LLX  
Preliminary  
32768-word × 8-bit High Speed CMOS Static RAM  
For the availability of this product, please contact the sales office.  
Description  
CXK5T8257BTM  
CXK5T8257BYM  
The CXK5T8257BTM/BYM/BM is 262,144 bits high  
speed CMOS static RAM organized as 32768-words  
by 8 bits.  
28 pin TSOP (Plastic)  
28 pin TSOP (Plastic)  
Special feature are low power consumption and  
high speed.  
The CXK5T8257BTM/BYM/BM is a suitable RAM  
for portable equipment with battery back up.  
CXK5T8257BM  
Features  
28 pin SOP (Plastic)  
Extended operating temperature range: –25 to +85°C  
Wide supply voltage range operation: 2.7 to 3.6V  
Fast access time:  
3.0V operation -10LLX  
-12LLX  
(Access time)  
100ns (Max.)  
120ns (Max.)  
85ns (Max.)  
100ns (Max.)  
3.3V operation -10LLX  
-12LLX  
Low standby current: 7.0µA (Max.)  
Low power data retention: 2.0V (Min.)  
Available in many packages  
CXK5T8257BTM/BYM  
Block Diagram  
A14  
A13  
A12  
A11  
A9  
8mm × 13.4mm 28 pin TSOP Package  
VCC  
CXK5T8257BM  
Memory  
Matrix  
Row  
Decoder  
Buffer  
450mil 28 pin SOP Package  
A8  
A7  
GND  
512 × 512  
Function  
A6  
A5  
32768-word × 8 bit static RAM  
Structure  
A10  
A4  
A3  
A2  
A1  
A0  
Silicon gate CMOS IC  
I/O Gate  
Column  
Decoder  
Buffer  
Buffer  
OE  
WE  
I/O Buffer  
CE  
I/O1  
I/O8  
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by  
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the  
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.  
– 1 –  
PE96509-ST  

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