Datasheet > CXK5B81020JM-12

CXK5B81020JM-12

更新时间： 2024-11-30 23:13:15

品牌	Logo	应用领域
索尼 - SONY		/
页数	文件大小	规格书
9页	186K
描述
131072-word ⅴ 8-bit High Speed Bi-CMOS Static RAM

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CXK5B81020JM-12 数据手册

-12

CXK5B81020J/TM

131072-word × 8-bit High Speed Bi-CMOS Static RAM

For the availability of this product, please contact the sales office.

Description

CXK5B81020J

32 pin SOJ (PIastic)

CXK5B81020TM

32 pin TSOP (PIastic)

CXK5B81020J/TM is a high speed 1M bit Bi-CMOS

static RAM organized as 131072 words by 8 bits.

Operating on a single 3.3V supply this asynchronous

IC is suitable for use in high speed and low power

applications.

Features

• Single 3.3V power supply: 3.3V ± 0.3V

• Fast access time

12ns (Max.)

10mA (Max.)

Function

• Low standby current:

131072 word × 8-bit static RAM

• Low power operation 864mW (Max.)

• Package line-up

Structure

Dual Vcc/Vss

Silicon gate Bi-CMOS IC

CXK5B81020J

400mil 32pin SOJ package

CXK5B81020TM 400mil 32pin TSOP package

Block Diagram

Pin Configuration (Top View) Pin Description

A15

A16

Symbol

Description

A0 to A16

Address input

Vcc

Memory

Matrix

256 × 4096

Row

Decoder

Buffer

I/O1 to I/O8 Data input

A13

A14

A11

A10

Chip enable input

I/O1

I/O2

27 I/O8

26 I/O7

25 GND

24 Vcc

GND

Write enable input

Output enable input

+3.3V power supply

Ground

Vcc

GND

I/O3

I/O6

I/O5

A12

VCC

GND

I/O4

A16

I/O Gate

Column

Decoder

A10

No connection

A15 14

Buffer

18 A11

17 A12

A14

A13

I/O

Buffer

I/O1 I/O8

Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by

any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the

operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.

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E93707B58-PP

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