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CXK5T81000AM PDF预览

CXK5T81000AM

更新时间: 2024-11-30 22:18:51
品牌 Logo 应用领域
索尼 - SONY /
页数 文件大小 规格书
11页 264K
描述
131072-word x 8-bit High Speed CMOS Static RAM

CXK5T81000AM 数据手册

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CXK5T81000ATM/AYM/AM -10LLX/12LLX  
131072-word × 8-bit High Speed CMOS Static RAM  
Preliminary  
For the availability of this product, please contact the sales office.  
Description  
CXK5T81000ATM  
CXK5T81000AYM  
The CXK5T81000ATM/AYM/AM is a high speed  
CMOS static RAM organized as 131072-words by  
8-bits.  
32 pin TSOP (Plastic)  
32 pin TSOP (Plastic)  
Special feature are low power consumption and  
high speed.  
The CXK5T81000ATM/AYM/AM is a suitable RAM  
for portable equipment with battery back up.  
CXK5T81000AM  
32 pin SOP (Plastic)  
Features  
Extended operating temperature range:  
–25 to +85°C  
Wide supply voltage range operation: 2.7 to 3.6V  
Fast access time:  
(Access time)  
3.0V operation -10LLX  
-12LLX  
100ns (Max.)  
120ns (Max.)  
85ns (Max.)  
100ns (Max.)  
28µA (Max.)  
3.3V operation -10LLX  
-12LLX  
Block Diagram  
Low standby current:  
A10  
A11  
A9  
A8  
A13  
A15  
A16  
A14  
A12  
A7  
Low data retention current: 24µA (Max.)  
VCC  
Low voltage data retention: 2.0V  
Package line-up  
(Min.)  
Memory  
Matrix  
Row  
Decoder  
Buffer  
GND  
1024 × 1024  
CXK5T81000ATM/AYM  
8mm × 20mm 32 pin TSOP package  
CXK5T81000AM  
525mil 32 pin SOP package  
A6  
A5  
A4  
A3  
A2  
A1  
A0  
I/O Gate  
Column  
Decoder  
Function  
Buffer  
Buffer  
131072-word × 8-bit static RAM  
Structure  
OE  
Silicon gate CMOS IC  
WE  
I/O Buffer  
CE1  
CE2  
I/O1 I/O8  
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by  
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the  
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.  
– 1 –  
PE96324-ST  

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