CSD1616

更新时间： 2024-11-11 04:12:51

品牌	Logo	应用领域
CDIL		晶体晶体管
页数	文件大小	规格书
3页	170K
描述
NPN SILICON EPITAXIAL TRANSISTOR

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中文翻译

获取价格

技术参数
数据手册

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CSD1616 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.61
Base Number Matches：	1

CSD1616 数据手册

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company

NPN SILICON EPITAXIAL TRANSISTOR

CSD1616

TO-92

BCE

Audio Frequency Power Amplifier And Medium Speed Switching

Complementary CSB1116/1116A

ABSOLUTE MAXIMUM RATINGS(Ta=25deg C)

DESCRIPTION

SYMBOL

VCBO

VCEO

VEBO

VALUE

UNIT

Collector -Base Voltage

Collector -Emitter Voltage

Emitter Base Voltage

Collector Current (DC)

Collector Current (Pulse)

Collector Dissipation

6.0

1.0

2.0

IC*

0.75

Operating And Storage Junction

Temperature Range

Tj, Tstg

-55 to +150

deg C

*PW=10ms, duty Cycle=50%

ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Specified)

DESCRIPTION

SYMBOL TEST CONDITION

MIN

135

0.60

TYP

MAX

100

600

0.70

0.30

1.2

UNIT

Collector Cut off Current

Emitter Cut off Current

DC Current Gain

ICBO

IEBO

VCB=60V, IE=0

VEB=6V, IC=0

hFE(1) *

hFE(2) *

IC=100mA, VCE=2V

IC=1A, VCE=2V

Base Emitter On Voltage

VBE(on)* VCE=2V,IC=50mA

VCE(Sat)* IC=1A, IB=50mA

VBE(Sat)* IC=1A, IB=50mA

Collector Emitter Saturation Voltage

Base Emitter Saturation Voltage

Dynamic Characteristics

Transition Frequency

Collector Output Capacitance

Cob

VCE=2V,IC=100mA,

VCB=10V, IE=0

f=1MHz

100

MHz

SWITCHING TIMES

Turn on time

Storage time

Fall time

ton

tstg

VCC=10V,IC=100mA

IB1=IB2=10mA,

VBE(off)2=3V

0.07

0.95

0.07

hFE(1) * CLASSIFICATION

Y: 135-270

G: 200-400

L: 300-600

*Pulse Test : PW=350us, Duty Cycle=2% Pulsed

Continental Device India Limited

Page 1 of 3

Data Sheet

12 3

中文翻译

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