Datasheet > CS55N06A4

CS55N06A4

更新时间： 2024-09-17 17:01:31

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
10页	2056K
描述
TO-252(或DPAK)

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数据手册

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CS55N06A4 数据手册

Silicon N-Channel Power Trench MOSFET

CS55N06 A4

○

General Description

：

V_DSS

CS55N06 A4, the silicon N-channel Enhanced

VDMOSFETs, is obtained by the high density Trenchtechnology

which reduce the conduction loss, improve switching performance

and enhance the avalanche energy. The transistor can be used in

various power switching circuit for system miniaturization and higher

efficiency. The package form is TO-252, which accords with the

RoHS standard.

I_D

R_DS(ON)Typ

mΩ

Features

：

l Fast Switching

l ESD Improved Capability

l Low ON Resistance

l Low Gate Charge

l Low Reverse transfer capacitances

l 100% Single Pulse avalanche energy Test

Applications

：

Power switch circuit of adaptor and charger.

Absolute

Symbol

V_DSS

（

T_J= 25

℃ unless otherwise specified）：

Parameter

Rating

Units

Drain-to-Source Voltage

Continuous Drain Current T_C= 25 °C

Continuous Drain Current T_C= 100 °C

Pulsed Drain Current T_C= 25 °C

Gate-to-Source Voltage

I_D

220

I_DM

V_GS

Single Pulse Avalanche Energy

Power Dissipation T_C= 25 °C

135

℃

E_AS

69.5

P_D

Operating Junction and Storage Temperature Range

T_J

，

T_stg

150

，

–55 to 150

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.

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