Silicon N-Channel Power MOSFET
R
○
CS55N25 A8R-G
General Description:
VDSS
250
V
A
CS55N25 A8R-G the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is TO-220,
which accords with the RoHS standard.
ID
55
300
69
PD (TC=25℃)
RDS(ON)Typ
W
mΩ
Features:
Fast Switching
Low ON Resistance(Rdson≤69m
Ω)
Low Gate Charge (Typical Data:58.7nC)
Low Reverse transfer capacitances(Typical: 33pF)
100% Single Pulse avalanche energy Test
Halogen Free
Applications:
Power switch circuit of electron ballast and adaptor.
Absolute(Tc= 25℃ unless otherwise specified):
Parameter
Symbol
VDSS
Rating
250
55
Units
V
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
A
ID
35
A
a1
220
±30
A
IDM
Gate-to-Source Voltage
VGS
V
a2
Single Pulse Avalanche Energy
2000
mJ
EAS
a3
Peak Diode Recovery dv/dt
5.0
V/ns
W
dv/dt
Power Dissipation
300
2.4
PD
Derating Factor above 25°C
W/℃
℃
Operating Junction and Storage Temperature Range
TJ,Tstg
150,–55 to 150
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.
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2022V01