Datasheet > CS55N25A8R-G

CS55N25A8R-G

更新时间： 2024-11-12 17:01:43

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
10页	470K
描述
TO-220

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CS55N25A8R-G 数据手册

Silicon N-Channel Power MOSFET

○

CS55N25 A8R-G

General Description：

V_DSS

250

CS55N25 A8R-G the silicon N-channel Enhanced

VDMOSFETs, is obtained by the self-aligned planar Technology

which reduce the conduction loss, improve switching

performance and enhance the avalanche energy. The transistor

can be used in various power switching circuit for system

miniaturization and higher efficiency. The package form is TO-220,

which accords with the RoHS standard.

I_D

300

P_D(T_C=25℃)

R_DS(ON)Typ

mΩ

Features：

 Fast Switching



Low ON Resistance(Rdson≤69m

Ω)

 Low Gate Charge (Typical Data:58.7nC)

 Low Reverse transfer capacitances(Typical: 33pF)

 100% Single Pulse avalanche energy Test

 Halogen Free

Applications：

Power switch circuit of electron ballast and adaptor.

Absolute（Tc= 25℃ unless otherwise specified）：

Parameter

Symbol

V_DSS

Rating

250

Units

Drain-to-Source Voltage

Continuous Drain Current

Continuous Drain Current T_C= 100 °C

Pulsed Drain Current

I_D

220

±30

I_DM

Gate-to-Source Voltage

V_GS

Single Pulse Avalanche Energy

2000

E_AS

Peak Diode Recovery dv/dt

5.0

V/ns

dv/dt

Power Dissipation

300

2.4

P_D

Derating Factor above 25°C

W/℃

℃

Operating Junction and Storage Temperature Range

T_J，T_stg

150，–55 to 150

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.

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