Datasheet > CS55N06AQ3-G

CS55N06AQ3-G

更新时间： 2024-03-03 10:10:43

品牌	Logo	应用领域
华润微 - CRMICRO		光电二极管
页数	文件大小	规格书
10页	1493K
描述
PDFN5×6

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

CS55N06AQ3-G 数据手册

Silicon N-Channel Power Trench MOSFET

CS55N06 AQ3-G

○

General Description

：

V_DSS

I_D_（

CS55N06 AQ3-G, the silicon N-channel Enhanced

VDMOSFETs, is obtained by the high density Trenchtechnology

which reduce the conduction loss, improve switching performance

and enhance the avalanche energy. The transistor can be used in

various power switching circuit for system miniaturization and higher

Silicon limited current^）

R_DS(ON)Typ

mΩ

efficiency. The package form is PDFN 5×6, which accords with the

RoHS standard.

Features

：

l Fast Switching

l Low ON Resistance

l Low Gate Charge

l Low Reverse transfer capacitances

l 100% Single Pulse avalanche energy Test

l Halogen Free

Applications

：

Power switch circuit of adaptor and charger.

Absolute

Symbol

V_DSS

（

Tc= 25

℃ unless otherwise specified）：

Parameter

Rating

Units

Drain-to-Source Voltage

Continuous Drain Current

I_D

Continuous Drain Current T_C= 100 °C

Pulsed Drain Current

220

I_DM

Gate-to-Source Voltage

V_GS

Single Pulse Avalanche Energy

Power Dissipation

135

℃

E_AS

69.5

P_D

Operating Junction and Storage Temperature Range

T_J

，

T_stg

150

，

–55 to 150

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.

Page 1 of 10

2019V01

12 3 4 5 6 7...10

中文翻译

下载PDF

与CS55N06AQ3-G相关器件

型号	品牌	获取价格	描述	数据表
CS55N10 A8-G	CRMICRO	获取价格	TO-220
CS55N10A3	CRMICRO	获取价格	TO-251
CS55N10A4	CRMICRO	获取价格	TO-252(或DPAK)
CS55N10A8	CRMICRO	获取价格	TO-220
CS55N10AQ3-G	CRMICRO	获取价格	PDFN5×6
CS55N25A8R-G	CRMICRO	获取价格	TO-220
CS55N25AKR	CRMICRO	获取价格	TO-247
CS55N25FA9R	CRMICRO	获取价格	TO-220F
CS5-6	SUPERWORLD	获取价格	POWER TRANSFORMER
CS-560-K	PREMO	获取价格	Coils and Chokes for general use