Silicon N-Channel Power MOSFET
CS55N10 A8
R
○
General Description:
VDSS
ID(
100
68
V
CS55N10 A8, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the high density Trench
technology which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. This device is
suitable for use as a load switch and PWM applications. The
package form is TO-220AB, which accords with the RoHS
standard.
A
A
Silicon limited current)
ID(
55
Package limited)
PD
140
12
W
RDS(ON)Typ
mΩ
Features:
l Fast Switching
l Low ON Resistance(Rdson≤15 mΩ)
l Low Gate Charge
l Low Reverse transfer capacitances
l 100% Single Pulse avalanche energy Test
Applications:
Power switch circuit of adaptor and charger.
Absolute(Tj= 25℃ unless otherwise specified)
Parameter
Symbol
VDSS
Rating
Units
Drain-to-Source Voltage
100
V
A
Continuous Drain Current TC = 25 °C
Continuous Drain Current TC = 100 °C
Pulsed Drain Current TC = 25 °C
Gate-to-Source Voltage
68
ID
43
A
a1
272
A
IDM
VGS
±20
295.8
V
a2
Avalanche Energy
mJ
W
EAS
Power Dissipation TC = 25 °C
Derating Factor above 25°C
140
PD
1.12
W/℃
℃
℃
Operating Junction and Storage Temperature Range
MaximumTemperature for Soldering
TJ,Tstg
150,–55 to 150
300
TL
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