Datasheet > CS100N03B4-1

CS100N03B4-1

更新时间： 2024-10-28 15:19:51

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
9页	390K
描述
TO-252(或DPAK)

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CS100N03B4-1 数据手册

Silicon N-Channel Power MOSFET

CS100N03 B4-1

○

General Description：

V_DSS

I_D_（

100

CS100N03 B4-1, the silicon N-channel Enhanced

VDMOSFETs, is obtained by the high density Trench

technology which reduce the conduction loss, improve switching

performance and enhance the avalanche energy. This device is

suitable for use as a load switch and PWM applications. The

package form is TO-252, which accords with the RoHS standard.

Features：

Silicon limited current^）

R_DS(ON)Typ

mΩ

l Fast Switching

l Low ON Resistance(Rdson≤6 mΩ)

l Low Gate Charge

l Low Reverse transfer capacitances

l 100% Single Pulse avalanche energy Test

Applications：

Power switch circuit of adaptor and charger.

Absolute（TC= 25℃ unless otherwise specified）

Parameter

Symbol

V_DSS

Rating

Units

Drain-to-Source Voltage

Continuous Drain Current

100

I_D

Continuous Drain Current T_C= 100 °C

Pulsed Drain Current

400

I_DM

Gate-to-Source Voltage

V_GS

±20

Avalanche Energy

100

E_AS

Power Dissipation

0.71

P_D

Derating Factor above 25°C

Operating Junction and Storage Temperature Range

MaximumTemperature for Soldering

W/℃

℃

T_J，T_stg

150，–55 to 150

300

T_L

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 9

2017V01

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