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CS100N03B4-1 PDF预览

CS100N03B4-1

更新时间: 2024-10-28 15:19:51
品牌 Logo 应用领域
华润微 - CRMICRO /
页数 文件大小 规格书
9页 390K
描述
TO-252(或DPAK)

CS100N03B4-1 数据手册

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Silicon N-Channel Power MOSFET  
CS100N03 B4-1  
R
General Description  
VDSS  
ID(  
30  
100  
90  
4
V
CS100N03 B4-1, the silicon N-channel Enhanced  
VDMOSFETs, is obtained by the high density Trench  
technology which reduce the conduction loss, improve switching  
performance and enhance the avalanche energy. This device is  
suitable for use as a load switch and PWM applications. The  
package form is TO-252, which accords with the RoHS standard.  
Features  
A
W
Silicon limited current)  
PD  
RDS(ON)Typ  
m  
l Fast Switching  
l Low ON Resistance(Rdson6 m)  
l Low Gate Charge  
l Low Reverse transfer capacitances  
l 100% Single Pulse avalanche energy Test  
Applications:  
Power switch circuit of adaptor and charger.  
AbsoluteTC= 25unless otherwise specified)  
Parameter  
Symbol  
VDSS  
Rating  
Units  
Drain-to-Source Voltage  
30  
V
A
Continuous Drain Current  
100  
ID  
Continuous Drain Current TC = 100 °C  
Pulsed Drain Current  
75  
A
a1  
400  
A
IDM  
Gate-to-Source Voltage  
VGS  
±20  
V
a2  
Avalanche Energy  
100  
mJ  
W
EAS  
Power Dissipation  
90  
0.71  
PD  
Derating Factor above 25°C  
Operating Junction and Storage Temperature Range  
MaximumTemperature for Soldering  
W/℃  
TJTstg  
15055 to 150  
300  
TL  
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 9  
2017V01