Datasheet > CS100N06D3-G

CS100N06D3-G

更新时间： 2024-06-27 12:13:22

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
10页	1722K
描述
TO-251

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数据手册

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CS100N06D3-G 数据手册

Silicon N-Channel Power Trench MOSFET

CS100N06 D3-G

○

General Description：

V_DSS

CS100N06 D3-G the silicon N-channel Enhanced

VDMOSFETs, is obtained by the high density Trench technology

which reduce the conduction loss, improve switching

performance and enhance the avalanche energy. The transistor

can be used in various power switching circuit for system

miniaturization and higher efficiency. The package form is

TO-251, which accords with the RoHS standard.

Features：

I_D

（

100

125

6.5

）

Silicon limited current

P_D(T_C=25℃)

R_DS(ON)Typ

mΩ

 Fast Switching

 Low ON Resistance (Rdson≤10mΩ)

 Low Gate Charge (Typical Data: 88.8nC)

 Low Reverse transfer capacitances(Typical:220pF)

 100% Single Pulse avalanche energy Test

 Halogen Free

Applications：

Power switch circuit of adaptor and charger.

Absolute（Tc= 25℃ unless otherwise specified）：

Parameter

Symbol

V_DSS

Rating

Units

Drain-to-Source Voltage

Continuous Drain Current

100

I_D

Continuous Drain Current T_C= 100 °C

Pulsed Drain Current

400

±20

211

125

I_DM

Gate-to-Source Voltage

V_GS

Single Pulse Avalanche Energy

Power Dissipation

℃

E_AS

P_D

Operating Junction and Storage Temperature Range

Maximum Temperature for Soldering

T_J，T_stg

T_L

150，–55 to 150

300

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.

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