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CS100N08A8 PDF预览

CS100N08A8

更新时间: 2024-09-14 15:19:43
品牌 Logo 应用领域
华润微 - CRMICRO /
页数 文件大小 规格书
10页 583K
描述
TO-220

CS100N08A8 数据手册

 浏览型号CS100N08A8的Datasheet PDF文件第2页浏览型号CS100N08A8的Datasheet PDF文件第3页浏览型号CS100N08A8的Datasheet PDF文件第4页浏览型号CS100N08A8的Datasheet PDF文件第5页浏览型号CS100N08A8的Datasheet PDF文件第6页浏览型号CS100N08A8的Datasheet PDF文件第7页 
Silicon N-Channel Power MOSFET  
CS100N08 A8  
R
General Description  
VDSS  
85  
V
A
CS100N08 A8, the silicon N-channel Enhanced  
VDMOSFETs, is obtained by advanced Trench Technology  
which reduce the conduction loss, improve switching  
performance and enhance the avalanche energy. The transistor  
can be used in various power switching circuit for system  
miniaturization and higher efficiency. The package form is  
TO-220AB, which accords with the RoHS standard.  
ID  
100  
198  
6.6  
Silicon limited current  
PD(TC=25)  
W
RDS(ON)Typ  
mΩ  
Features  
Fast Switching  
Low ON Resistance(Rdson8.5m)  
Low Gate Charge (Typical Data:59.8nC)  
Low Reverse transfer capacitances(Typical:237pF)  
100% Single Pulse avalanche energy Test  
Applications:  
Power switch circuit of adaptor and charger.  
AbsoluteTc= 25unless otherwise specified:  
Parameter  
Symbol  
VDSS  
Rating  
Units  
Drain-to-Source Voltage  
85  
100  
65  
V
A
Continuous Drain Current  
ID  
Continuous Drain Current TC = 100 °C  
Pulsed Drain Current  
A
a1  
400  
±20  
460  
198  
1.58  
A
IDM  
Gate-to-Source Voltage  
VGS  
V
a2  
Single Pulse Avalanche Energy  
Power Dissipation  
mJ  
W
EAS  
PD  
Derating Factor above 25°C  
Operating Junction and Storage Temperature Range  
Maximum Temperature for Soldering  
W/℃  
TJTstg  
15055 to 150  
300  
TL  
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 10  
2017V01  

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