Datasheet > CS105N08B8

CS105N08B8

更新时间： 2024-09-16 15:18:47

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
10页	446K
描述
TO-220

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CS105N08B8 数据手册

Silicon N-Channel Power MOSFET

CS105N08 B8

○

V_DSS

105

General Description：

I_D_（

Silicon limited current^）

CS105N08 B8, the silicon N-channel Enhanced

VDMOSFETs, is obtained by the high density Trench

technology which reduce the conduction loss, improve switching

performance and enhance the avalanche energy. This device is

suitable for use as a load switch and PWM applications. The

package form is TO-220AB, which accords with the RoHS

standard.

I_D

（

）

Package limited

P_D

147

6.3

R_DS(ON)Typ

mΩ

Features：

l Fast Switching

l Low ON Resistance(Rdson≤8

l Low Gate Charge

mΩ)

l Low Reverse transfer capacitances

l 100% Single Pulse avalanche energy Test

Applications：

Power switch circuit of adaptor and charger.

Absolute（Tj= 25℃ unless otherwise specified）

Parameter

Symbol

V_DSS

Rating

Units

Drain-to-Source Voltage

Continuous Drain Current

105

I_D

Continuous Drain Current T_C= 100 °C

Pulsed Drain Current

420

I_DM

Gate-to-Source Voltage

V_GS

±20

Avalanche Energy

420

E_AS

Power Dissipation T_C= 25 °C

Derating Factor above 25°C

Operating Junction and Storage Temperature Range

MaximumTemperature for Soldering

147

1.17

P_D

W/℃

℃

T_J，T_stg

150，–55 to 150

300

T_L

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 10

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