Datasheet > CS105N15A8

CS105N15A8

更新时间： 2024-11-06 17:01:19

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华润微 - CRMICRO		/
页数	文件大小	规格书
10页	405K
描述
TO-220

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CS105N15A8 数据手册

Silicon N-Channel Power MOSFET

CS105N15 A8

○

General Description：

V_DSS

150

105

I_D

CS105N15 A8, the silicon N-channel Enhanced

VDMOSFETs, is obtained by advanced Trench Technology

which reduce the conduction loss, improve switching

performance and enhance the avalanche energy. The transistor

can be used in various power switching circuit for system

P_D(T_C=25℃)

312.5

R_DS(ON)Typ

9.8

mΩ

miniaturization and higher efficiency. The package form is

TO-220AB, which accords with the RoHS standard.

Features：

l Fast Switching

l Low ON Resistance

l Low Gate Charge

l Low Reverse transfer capacitances(Typical:220.2pF)

l 100% Single Pulse avalanche energy Test

Applications：

Power switch circuit of adaptor and charger.

Absolute（T_J= 25℃ unless otherwise specified）：

Parameter

Symbol

V_DSS

Rating

Units

Drain-to-Source Voltage

150

Continuous Drain Current T_C= 25 °C

Continuous Drain Current T_C= 100 °C

Pulsed Drain Current T_C= 25 °C

Gate-to-Source Voltage

105

I_D

420

I_DM

V_GS

±20

Single Pulse Avalanche Energy

Power Dissipation T_C= 25 °C

925

E_AS

312.5

P_D

Derating Factor above 25°C

2.5

150，–55 to 150

300

W/℃

℃

Operating Junction and Storage Temperature Range

Maximum Temperature for Soldering

T_J，T_stg

T_L

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