Datasheet > CS105N08A8

CS105N08A8

更新时间： 2024-09-16 15:18:51

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
10页	493K
描述
TO-220

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CS105N08A8 数据手册

Silicon N-Channel Power MOSFET

CS105N08 A8

○

General Description：

V_DSS

I_D_（

105

CS105N08 A8, the silicon N-channel Enhanced

VDMOSFETs, is obtained by the high density Trench

technology which reduce the conduction loss, improve

switching performance and enhance the avalanche energy. This

device is suitable for use as a load switch and PWM

applications. The package form is TO-220AB, which accords with

the RoHS standard.

Silicon limited current^）

I_D_（

Package limited^）

138

6.2

R_DS(ON)Typ

mΩ

Features：

l Fast Switching

l Low ON Resistance(Rdson≤8.0

mΩ)

l Low Gate Charge

l Low Reverse transfer capacitances

l 100% Single Pulse avalanche energy Test

Applications：

Power switch circuit of adaptor and charger.

Absolute（Tj= 25℃ unless otherwise specified）

Parameter

Symbol

V_DSS

Rating

Units

Drain-to-Source Voltage

Continuous Drain Current

105

I_D

Continuous Drain Current T_C= 100 °C

Pulsed Drain Current

420

I_DM

Gate-to-Source Voltage

V_GS

±20

Avalanche Energy

462

E_AS

Power Dissipation T_C= 25 °C

Derating Factor above 25°C

Operating Junction and Storage Temperature Range

MaximumTemperature for Soldering

138

1.11

P_D

W/℃

℃

T_J，T_stg

150，–55 to 150

300

T_L

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