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CS100N06 A3 PDF预览

CS100N06 A3

更新时间: 2024-10-28 15:19:47
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华润微 - CRMICRO /
页数 文件大小 规格书
10页 513K
描述
TO-251

CS100N06 A3 数据手册

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Silicon N-Channel Power MOSFET  
CS100N06 A3  
R
General Description  
VDSS  
ID(  
60  
100  
60  
V
CS100N06 A3, the silicon N-channel Enhanced  
VDMOSFETs, is obtained by the high density Trench  
technology which reduce the conduction loss, improve switching  
performance and enhance the avalanche energy. This device is  
suitable for use as a load switch and PWM applications. The  
package form is TO-251, which accords with the RoHS standard.  
Features  
A
A
Silicon limited current)  
ID(  
Package limited)  
PD  
130.2  
5.6  
W
RDS(ON)Typ  
m  
l Fast Switching  
l Low ON Resistance  
l Low Gate Charge  
l Low Reverse transfer capacitances  
l 100% Single Pulse avalanche energy Test  
Applications:  
Power switch circuit of adaptor and charger.  
AbsoluteTj= 25unless otherwise specified)  
Parameter  
Symbol  
VDSS  
Rating  
Units  
Drain-to-Source Voltage  
60  
V
A
Continuous Drain Current TC = 25 °C(Silicon Limited)  
Continuous Drain Current Tc= 25°C(Package Limited) a1  
Continuous Drain Current TC = 100 °C  
Pulsed Drain Current TC = 25 °C  
Gate-to-Source Voltage  
100  
ID  
60  
A
60  
A
a1  
240  
A
IDM  
VGS  
±20  
460  
V
a2  
Avalanche Energy  
mJ  
W
EAS  
Power Dissipation TC = 25 °C  
130.2  
PD  
Derating Factor above 25°C  
1.04  
W/  
Operating Junction and Storage Temperature Range  
Maximum Temperature for Soldering  
TJTstg  
15055 to 150  
300  
TL  
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