Datasheet > CS100N06A4

CS100N06A4

更新时间： 2024-06-27 12:14:04

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
10页	494K
描述
TO-252(或DPAK)

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CS100N06A4 数据手册

Silicon N-Channel Power MOSFET

CS100N06 A4

○

General Description：

V_DSS

I_D_（

100

CS100N06 A4, the silicon N-channel Enhanced

VDMOSFETs, is obtained by the high density Trench

technology which reduce the conduction loss, improve switching

performance and enhance the avalanche energy. This device is

suitable for use as a load switch and PWM applications. The

package form is TO-252, which accords with the RoHS standard.

Features：

Silicon limited current^）

I_D_（

Package limited^）

130.2

5.6

R_DS(ON)Typ

mΩ

l Fast Switching

l Low ON Resistance

l Low Gate Charge

l Low Reverse transfer capacitances

l 100% Single Pulse avalanche energy Test

Applications：

Power switch circuit of adaptor and charger.

Absolute（Tj= 25℃ unless otherwise specified）

Parameter

Symbol

V_DSS

Rating

Units

Drain-to-Source Voltage

Continuous Drain Current T_C= 25 °C_{(Silicon Limited)}

Continuous Drain Current Tc= 25°C_{(Package Limited) a1}

Continuous Drain Current T_C= 100 °C

Pulsed Drain Current T_C= 25 °C

Gate-to-Source Voltage

100

I_D

240

±20

I_DM

V_GS

Avalanche Energy

460

E_AS

Power Dissipation T_C= 25 °C

130.2

P_D

Derating Factor above 25°C

1.04

W/℃

℃

Operating Junction and Storage Temperature Range

T_J，T_stg

150，–55 to 150

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 10

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