Datasheet > CS100N03B8-1

CS100N03B8-1

更新时间： 2024-10-28 17:01:39

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
9页	380K
描述
TO-220

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

CS100N03B8-1 数据手册

Silicon N-Channel Power MOSFET

CS100N03 B8-1

○

General Description：

V_DSS

I_D_（

100

CS100N03 B8-1, the silicon N-channel Enhanced

VDMOSFETs, is obtained by the high density Trench

technology which reduce the conduction loss, improve switching

performance and enhance the avalanche energy. This device is

suitable for use as a load switch and PWM applications. The

package form is TO-220AB, which accords with the RoHS

standard.

Silicon limited current^）

R_DS(ON)Typ

mΩ

Features：

l Fast Switching

l Low ON Resistance(Rdson≤6 mΩ)

l Low Gate Charge

l Low Reverse transfer capacitances

l 100% Single Pulse avalanche energy Test

Applications：

Power switch circuit of adaptor and charger.

Absolute（TC= 25℃ unless otherwise specified）

Parameter

Symbol

V_DSS

Rating

Units

Drain-to-Source Voltage

Continuous Drain Current

100

I_D

Continuous Drain Current T_C= 100 °C

Pulsed Drain Current

400

I_DM

Gate-to-Source Voltage

V_GS

±20

Avalanche Energy

100

E_AS

Power Dissipation

0.71

P_D

Derating Factor above 25°C

Operating Junction and Storage Temperature Range

MaximumTemperature for Soldering

W/℃

℃

T_J，T_stg

150，–55 to 150

300

T_L

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 9

2017V01

12 3 4 5 6 7...9

中文翻译

下载PDF

与CS100N03B8-1相关器件

型号	品牌	获取价格	描述	数据表
CS100N06 A3	CRMICRO	获取价格	TO-251
CS100N06 A4	CRMICRO	获取价格	TO-252(或DPAK)
CS100N06A3	CRMICRO	获取价格	TO-251
CS100N06A4	CRMICRO	获取价格	TO-252(或DPAK)
CS100N06A8	CRMICRO	获取价格	TO-220
CS100N06D3	CRMICRO	获取价格	TO-251
CS100N06D3-G	CRMICRO	获取价格	TO-251
CS100N06D4	CRMICRO	获取价格	TO-252(或DPAK)
CS100N06D8	CRMICRO	获取价格	TO-220
CS100N08A0	CRMICRO	获取价格	TO-263(或D2PAK)